wang xi, xiao shali, zhang liuqiang, et al. Pinhole imaging using CdZnTe detector for high-energy gamma source[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
wang xi, xiao shali, zhang liuqiang, et al. Pinhole imaging using CdZnTe detector for high-energy gamma source[J]. High Power Laser and Particle Beams, 2010, 22.
wang xi, xiao shali, zhang liuqiang, et al. Pinhole imaging using CdZnTe detector for high-energy gamma source[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
wang xi, xiao shali, zhang liuqiang, et al. Pinhole imaging using CdZnTe detector for high-energy gamma source[J]. High Power Laser and Particle Beams, 2010, 22.
Based on a new room-temperature CdZnTe detector, the energy spectrum of each pixel and the image of the 662 keV 137Cs source have been obtained with a thick pinhole system. According to penetration and scattering effect of the high energy photons in pinhole, the degradation of system spatial resolution was analyzed, and the images derived at different bias voltage were analyzed and compared. The experiments indicate that, the equivalent diameter, caused by penetration and scattering effect of the high energy photons, is the main reason for the degradation of system spatial resolution when the magnification is smaller than 3, and the influence of the pixel size is subtle. The quality of image would be improved when the bias voltage increases. However, extremely high voltage (high