sun yunqing, yang hongchun, wu minghe, et al. Voltage conversion ratio of photoconductive semiconductor switch in microstrip test circuit[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
sun yunqing, yang hongchun, wu minghe, et al. Voltage conversion ratio of photoconductive semiconductor switch in microstrip test circuit[J]. High Power Laser and Particle Beams, 2010, 22.
sun yunqing, yang hongchun, wu minghe, et al. Voltage conversion ratio of photoconductive semiconductor switch in microstrip test circuit[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
sun yunqing, yang hongchun, wu minghe, et al. Voltage conversion ratio of photoconductive semiconductor switch in microstrip test circuit[J]. High Power Laser and Particle Beams, 2010, 22.
The voltage conversion ratio of the photoconductive semiconductor switch (PCSS) is measured in the microstrip test circuit. The analytical equation of the ratio is deduced according to transmission line theory with the consideration of reflection from the source end and non-zero on-state resistances of PCSS. Calculations show that, when the PCSS is operated in linear mode, the voltage conversion ratio is always less than 50%; when the PCSS is operated in lock-on nonlinear mode, the ratio can be more than 50%, and reach 100% in ideal case; the output electrical pulse includes two peak voltages when the PCSS is operated in the critical case between the above two modes. The theoretical computation is in good agreement with the measured data within the error limitation. It is found that the mi