wang jun, bai yiming, liu yuanyuan, et al. Mechanisms of high efficiency for 980 nm diode lasers with asymmetric waveguide structure[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
wang jun, bai yiming, liu yuanyuan, et al. Mechanisms of high efficiency for 980 nm diode lasers with asymmetric waveguide structure[J]. High Power Laser and Particle Beams, 2010, 22.
wang jun, bai yiming, liu yuanyuan, et al. Mechanisms of high efficiency for 980 nm diode lasers with asymmetric waveguide structure[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
wang jun, bai yiming, liu yuanyuan, et al. Mechanisms of high efficiency for 980 nm diode lasers with asymmetric waveguide structure[J]. High Power Laser and Particle Beams, 2010, 22.
The optical losses of asymmetric and symmetric waveguide structures were calculated theoretically for high power 980 nm diode lasers, by means of the continuity equation under strong injection and the Helmholtz equation of complex refractive index model. The epitaxial materials of the both waveguide structures were prepared by the metallorganic chemical vapor deposition growth technique, and corresponding laser devices were fabricated. The electro-optical performances of both devices were measured and analyzed by comparison. The theoretical calculations and experimental results indicates that, the asymmetric waveguide structure material does not reduce the optical loss, but decreases the series resistance of the diode, therefore, it reduces the joule heating, and enhances the conversion ef