Influence of laser pulse shape on surface temperature of Si-target

wang shijun; wang yinglong; ding xuecheng; liang weihua; deng zechao; chu lizhi; fu guangsheng

Volume 22 Issue 08

Jul. 2010

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wang shijun, wang yinglong, ding xuecheng, et al. Influence of laser pulse shape on surface temperature of Si-target[J]. High Power Laser and Particle Beams, 2010, 22.

Citation:

wang shijun, wang yinglong, ding xuecheng, et al. Influence of laser pulse shape on surface temperature of Si-target[J]. High Power Laser and Particle Beams, 2010, 22.

wang shijun, wang yinglong, ding xuecheng, et al. Influence of laser pulse shape on surface temperature of Si-target[J]. High Power Laser and Particle Beams, 2010, 22.

Citation:

wang shijun, wang yinglong, ding xuecheng, et al. Influence of laser pulse shape on surface temperature of Si-target[J]. High Power Laser and Particle Beams, 2010, 22.

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Influence of laser pulse shape on surface temperature of Si-target

1.
College of Physics Science and Technology,Hebei University,Baoding 071002,China

Publish Date: 2010-07-12

Abstract

Abstract

Numerical simulation was applied to the study of femto/ picosecond laser-target interaction by two-temperature equation with proper initial and boundary conditions. The influence of laser pulse shapes on the carrier and lattice temperatures on the surface of Si-target was investigated. The results indicate that the main factor of temperature increasing is laser pulse power density. Pulse shapes: significantly effect the temperature distribution of the carriers on the Si-target surface, the temperature peak for rectangle pulses is the largest, and the temperature peak of Guassian pulses is the smallest. The conclusions are the theoretical basis of preparing excellent thin films.
- laser ablation,
- two-temperature equation,
- pulse shape,
- carrier,
- coupling time

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