chen zhaoquan, liu minghai, dan min, et al. Preparation of nano TiO2 thin films by plasma-enhanced chemical vapor deposition method[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
chen zhaoquan, liu minghai, dan min, et al. Preparation of nano TiO2 thin films by plasma-enhanced chemical vapor deposition method[J]. High Power Laser and Particle Beams, 2010, 22.
chen zhaoquan, liu minghai, dan min, et al. Preparation of nano TiO2 thin films by plasma-enhanced chemical vapor deposition method[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
chen zhaoquan, liu minghai, dan min, et al. Preparation of nano TiO2 thin films by plasma-enhanced chemical vapor deposition method[J]. High Power Laser and Particle Beams, 2010, 22.
Key Laboratory of Fusion and Advanced Electromagnetic Technology of Ministry of Education,College of Electrical and Electronic Engineering,Huazhong University of Science and Technology,Wuhan 430074,China
Nano TiO2 thin film produced by plasma-enhanced chemical vapor deposition method are deposited on the silicon substrate with the mixture of TiCl4 sources, argon and oxygen gases. Some technological parameters affecting the film performances are discussed. The results indicate that the surface of TiO2 film is even, its crystal structure is compact and the smallest crystal grain size is approximately 15 nm. The film crystal form change mainly relies on the deposition temperature. The film is amorphous for temperature lower than 300 ℃ and shows the anatase structure above the deposition temperature of 300 ℃.
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