liu yan, yang shanchao, lin dongsheng, et al. Synergistic effect of neutron and gamma irradiation on 10-bit CMOS digital-to-analog converter[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
liu yan, yang shanchao, lin dongsheng, et al. Synergistic effect of neutron and gamma irradiation on 10-bit CMOS digital-to-analog converter[J]. High Power Laser and Particle Beams, 2010, 22.
liu yan, yang shanchao, lin dongsheng, et al. Synergistic effect of neutron and gamma irradiation on 10-bit CMOS digital-to-analog converter[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
liu yan, yang shanchao, lin dongsheng, et al. Synergistic effect of neutron and gamma irradiation on 10-bit CMOS digital-to-analog converter[J]. High Power Laser and Particle Beams, 2010, 22.
This paper presents the experiment results of the combined irradiation by neutron and gamma ray on SDA9760, a 10-bit CMOS digital-to-analog converter. The electrical and functional tests were conducted in four types of irradiation: neutron, gamma ray, combined irradiation of neutron and gamma ray, and gamma ray after neutron irradiation. The experiment results show that the mixed neutron and gamma irradiation can induce a synergistic effect on the sample, i.e. the increase of total ionizing dose effect. Compared with neutron or gamma ray radiation, the device exhibits considerably severer degradation under neutron and gamma synergistic irradiation.
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