1:43.4 fractionalturn ratio pulse transformer

tan zhiyuan; gan kongyin; li ming; zhang dequan; hu heping; li tao; zhang hao

Volume 23 Issue 01

Sep. 2012

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References

Article Navigation > High Power Laser and Particle Beams > 2011 > 23(01): 0-

cheng bing-xun, wu wei-dong, he zhi-bing, et al. Effects of sputtering power on structure and properties of Ti films deposited by DC magnetron sputtering[J]. High Power Laser and Particle Beams, 2006, 18.

Citation:

tan zhiyuan, gan kongyin, li ming, et al. 1:43.4 fractionalturn ratio pulse transformer[J]. High Power Laser and Particle Beams, 2011, 23.

Citation:

tan zhiyuan, gan kongyin, li ming, et al. 1:43.4 fractionalturn ratio pulse transformer[J]. High Power Laser and Particle Beams, 2011, 23.

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1:43.4 fractionalturn ratio pulse transformer

1.
Institute of Applied Electronics,CAEP,P.O.Box 919-1014,Mianyang 621900,China;
2.
Graduate School of China Academy of Engineering Physics,Beijing 100088,China

Publish Date: 2010-12-27

Abstract

Abstract

The fractionalturn ratio pulse transformer was theoretically analyzed, including the relationship between rise time and the number of secondary winding turns, area of magnetic core cross section as well as voltagetime product. A 1:43.4 turn ratio pulse transformer was designed and built accordingly. The secondary leakage inductance is 157.3 μH and the stray capacitance is 412 pF. The rise time is 894 ns in low voltage test. High voltage test of the pulse transformer connected with a 420 Ω fictitious load has been performed in oil. An output pulse with a peak voltage of 42.7 kV and a rise time of 917 ns was generated．
- solid-state modulator,
- fractional-turn pulse transformer,
- rise time,
- leakage inductance,
- stray capacitance

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