Volume 22 Issue 11
Sep.  2010
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li li, lu qisheng. PV-type HgCdTe detector irradiated by out-of-band CW 10.6 μm laser[J]. High Power Laser and Particle Beams, 2010, 22.
Citation: li li, lu qisheng. PV-type HgCdTe detector irradiated by out-of-band CW 10.6 μm laser[J]. High Power Laser and Particle Beams, 2010, 22.

PV-type HgCdTe detector irradiated by out-of-band CW 10.6 μm laser

  • Publish Date: 2010-09-29
  • PV-type HgCdTe infrared detector is irradiated by 10.6 μm CW laser which is out of the detector’s response waveband. A series of detector output under various laser intensities are obtained. Responses of the detector to the irradiation of 10.6 μm laser are positive to that of in-band laser. The voltage output of the detector first increases and then decreases as the laser power density is increasing. Analysis shows that temperature rise and temperature grads are the main causes. Thermovoltage is generated when heat excited free electrons and vacancies diffuse under temperature grads, then separated by the electric field of PN junction. Thermovoltage is the main part of output when PV-type detector is irradiated by out-of-band laser.
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