Irradiation effect of neutrons on a-SiC:H films

liu gui-ang; xie er-qing; wang tian-min

Volume 15 Issue 03

Mar. 2003

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liu gui-ang, xie er-qing, wang tian-min. Irradiation effect of neutrons on a-SiC:H films[J]. High Power Laser and Particle Beams, 2003, 15.

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liu gui-ang, xie er-qing, wang tian-min. Irradiation effect of neutrons on a-SiC:H films[J]. High Power Laser and Particle Beams, 2003, 15.

liu gui-ang, xie er-qing, wang tian-min. Irradiation effect of neutrons on a-SiC:H films[J]. High Power Laser and Particle Beams, 2003, 15.

Citation:

liu gui-ang, xie er-qing, wang tian-min. Irradiation effect of neutrons on a-SiC:H films[J]. High Power Laser and Particle Beams, 2003, 15.

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Irradiation effect of neutrons on a-SiC:H films

1.
College of Science,Zhanjiang Ocean University,Zhanjiang 524088,China;
2.
Department of Physics,Lanzhou University,Lanzhou 730000,China;
3.
Beijing University of Aeronautics and Astronautics,Beijing 100083,China

Publish Date: 2003-03-15

Abstract

Abstract

Amorphous hydrogenated silicon carbide(aSiC:H) films were prepared by the reactive sputtering method,which were irradiated by high energy neutrons.Using resistivity,Raman scattering,and infrared transimissing spectroscopy,the authors investigated the neutrons irradiation effects on the structure and properties of a-SiC:H films.There were superfluous carbons in the films.It is found that the increase of irradiation doses results in the increase of SP-2C=C bonds in a-SiC:H films,i.e.the carbons in the films tended to graphitization.In general,the graphitization of carbons led to the decrease of resistivity sharply,but the decrease of resistivity in this paper was smooth .The phenomenon can be interpreted according to the model that the carriers were trapped by the defects.
- a-sic:h films,
- neutrons irradiation,
- amorphous carbons,
- graphitization

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