Electrical response of PC-type HgCdTe detector under out-band 10.6 μm laser irradiation

A 1-D energy balance model is used to describe the electrical responses of photoconductor (PC)-type HgCdTe detector under out-band 10.6 μm laser irradiation. The simulated resistance-vs-time curve agrees with the experimental curve in terms of curvilinear trend. The analyses of simulated results show that the sharp change of detector resistance results from the sharp change of carrier temperature at the very beginning and the very ending of laser irradiation, and that the slow change of the resistance results from the slow change of lattice temperature during and after laser irradiation, which is identical with the conclusions from the analyses of experimental results．