Electrical response of PC-type HgCdTe detector under out-band 10.6 μm laser irradiation

he yuanxing; jiang houman

Volume 22 Issue 12

Dec. 2010

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Article Navigation > High Power Laser and Particle Beams > 2010 > 22(12): 0-

wu jin-quan, lin zhao-xiang, song shu-yan, et al. Spatial distributions of laser-induced air plasmas[J]. High Power Laser and Particle Beams, 2007, 19.

Citation:

he yuanxing, jiang houman. Electrical response of PC-type HgCdTe detector under out-band 10.6 μm laser irradiation[J]. High Power Laser and Particle Beams, 2010, 22.

wu jin-quan, lin zhao-xiang, song shu-yan, et al. Spatial distributions of laser-induced air plasmas[J]. High Power Laser and Particle Beams, 2007, 19.

Citation:

he yuanxing, jiang houman. Electrical response of PC-type HgCdTe detector under out-band 10.6 μm laser irradiation[J]. High Power Laser and Particle Beams, 2010, 22.

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Electrical response of PC-type HgCdTe detector under out-band 10.6 μm laser irradiation

1.
College of Opto-Electronic Science and Engineering,National University of Defense Technology,Changsha 410073,China

Publish Date: 2010-12-07

Abstract

Abstract

A 1-D energy balance model is used to describe the electrical responses of photoconductor (PC)-type HgCdTe detector under out-band 10.6 μm laser irradiation. The simulated resistance-vs-time curve agrees with the experimental curve in terms of curvilinear trend. The analyses of simulated results show that the sharp change of detector resistance results from the sharp change of carrier temperature at the very beginning and the very ending of laser irradiation, and that the slow change of the resistance results from the slow change of lattice temperature during and after laser irradiation, which is identical with the conclusions from the analyses of experimental results．
- laser,
- pc-type hgcdte detector,
- hot carrier effects,
- energy balance model

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