chen zhongdao, bai shuxin, li gongyi, et al. Intense electron emission of SiC nanowires cathode used in high power microwave[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
chen zhongdao, bai shuxin, li gongyi, et al. Intense electron emission of SiC nanowires cathode used in high power microwave[J]. High Power Laser and Particle Beams, 2010, 22.
chen zhongdao, bai shuxin, li gongyi, et al. Intense electron emission of SiC nanowires cathode used in high power microwave[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
chen zhongdao, bai shuxin, li gongyi, et al. Intense electron emission of SiC nanowires cathode used in high power microwave[J]. High Power Laser and Particle Beams, 2010, 22.
Experimental study on the electron emission of silicon carbide nanowires cathode samples fabricated by the pyrolysis of polycarbosilane at 1 200 ℃ was carried out. The results show that the silicon carbide nanowires cathode has higher electron emission current density, which is 23.7 kA/cm2 at the condition of 115 kV stimulation voltage and 10 mm distance between the cathode and anode, compared to 14.0 kA/cm2 for the velvet cathode. Also, it emits electron beams of better quality and has longer service life.
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