Steady state thermal analysis of multi-active zone tunnel regeneration semiconductor laser

wang zhiqun; yao shun; cui bifeng; wang zhiyong; shen guangdi

Volume 23 Issue 03

Mar. 2011

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Article Navigation > High Power Laser and Particle Beams > 2011 > 23(03): 0-

zhang hai-ou, wang kun, wang gui-lan. Numerical simulation of laser plasma interaction[J]. High Power Laser and Particle Beams, 2007, 19.

Citation:

wang zhiqun, yao shun, cui bifeng, et al. Steady state thermal analysis of multi-active zone tunnel regeneration semiconductor laser[J]. High Power Laser and Particle Beams, 2011, 23.

zhang hai-ou, wang kun, wang gui-lan. Numerical simulation of laser plasma interaction[J]. High Power Laser and Particle Beams, 2007, 19.

Citation:

wang zhiqun, yao shun, cui bifeng, et al. Steady state thermal analysis of multi-active zone tunnel regeneration semiconductor laser[J]. High Power Laser and Particle Beams, 2011, 23.

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Steady state thermal analysis of multi-active zone tunnel regeneration semiconductor laser

1.
Optoelectronics Technology Laboratory,Beijing University of Technology,Beijing 100124,China;
2.
Institute of Laser Engineering,Beijing University of Technology,Beijing 100124,China

Publish Date: 2011-03-15

Abstract

Abstract

The multi-active zone tunnel regeneration semiconductor laser can fully use the transmission capability of multi-mode optical fiber, but its steady-state thermal property is unclear and limits its applications in high power area. The steady-state thermal property of the laser is studied with ANSYS and Fourier’s theorem, and temperature profiles of the active zones are obtained. An estimation method of active zone’s temperature and the way to reduce the laser’s thermal resistance are presented. Calculation results show that the multi-active zone tunnel regeneration semiconductor laser can reach higher power than the single-active zone semiconductor laser in CW mode．
- semiconductor laser,
- fiber coupling,
- multi-active zone,
- tunnel regeneration

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