wang zhiqun, yao shun, cui bifeng, et al. Steady state thermal analysis of multi-active zone tunnel regeneration semiconductor laser[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
wang zhiqun, yao shun, cui bifeng, et al. Steady state thermal analysis of multi-active zone tunnel regeneration semiconductor laser[J]. High Power Laser and Particle Beams, 2011, 23.
wang zhiqun, yao shun, cui bifeng, et al. Steady state thermal analysis of multi-active zone tunnel regeneration semiconductor laser[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
wang zhiqun, yao shun, cui bifeng, et al. Steady state thermal analysis of multi-active zone tunnel regeneration semiconductor laser[J]. High Power Laser and Particle Beams, 2011, 23.
The multi-active zone tunnel regeneration semiconductor laser can fully use the transmission capability of multi-mode optical fiber, but its steady-state thermal property is unclear and limits its applications in high power area. The steady-state thermal property of the laser is studied with ANSYS and Fourier’s theorem, and temperature profiles of the active zones are obtained. An estimation method of active zone’s temperature and the way to reduce the laser’s thermal resistance are presented. Calculation results show that the multi-active zone tunnel regeneration semiconductor laser can reach higher power than the single-active zone semiconductor laser in CW mode.