Estimating research on space low dose rate radiationinduced charge effects

he bao ping; wang gui zhen; gong jian cheng; zhou hui; guo hong xia

Volume 15 Issue 03

Mar. 2003

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he bao ping, wang gui zhen, gong jian cheng, et al. Estimating research on space low dose rate radiationinduced charge effects[J]. High Power Laser and Particle Beams, 2003, 15.

Citation:

he bao ping, wang gui zhen, gong jian cheng, et al. Estimating research on space low dose rate radiationinduced charge effects[J]. High Power Laser and Particle Beams, 2003, 15.

he bao ping, wang gui zhen, gong jian cheng, et al. Estimating research on space low dose rate radiationinduced charge effects[J]. High Power Laser and Particle Beams, 2003, 15.

Citation:

he bao ping, wang gui zhen, gong jian cheng, et al. Estimating research on space low dose rate radiationinduced charge effects[J]. High Power Laser and Particle Beams, 2003, 15.

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Estimating research on space low dose rate radiationinduced charge effects

1.
Northwest Institute of Nuclear Technology,P.O.Box 69 13,Xi’an 710613,China

Publish Date: 2003-03-15

Abstract

Abstract

This paper presents an estimate method on radiationinduced charge effect from LC4007A and LC4007B device in lowdose space environment. According to the result, on the basis of MILSTD 883C, Test Method 1019.4, 60Co irradiation plus 25℃ annealing can provide effects of oxidetrip charge on MOS device response in space that is estimated significantly less conservative than MILSTD 883C, Test Method 1019.4. The possible phenomena of oneweek hightemperature anneal in MILSTD 883C, Test Method 1019.4 detecting interfacetrip related failures in MOS devices were discussed.
- mos device,
- low doserate,
- charge effect,
- rebound phenomenon