chen xin, zhao qing, fang liang, et al. Fabrication of 100 nm mask by laser interference lithography[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
chen xin, zhao qing, fang liang, et al. Fabrication of 100 nm mask by laser interference lithography[J]. High Power Laser and Particle Beams, 2011, 23.
chen xin, zhao qing, fang liang, et al. Fabrication of 100 nm mask by laser interference lithography[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
chen xin, zhao qing, fang liang, et al. Fabrication of 100 nm mask by laser interference lithography[J]. High Power Laser and Particle Beams, 2011, 23.
School of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China;
2.
State Key Laboratory of Optical Technologies for Microfabrication,Institute of Optics and Electronics,Chinese Academy of Sciences,P.O.Box 350,Chengdu 610209,China
This paper presents a mask fabrication method, which uses laser interference lithography to prepare interference patterns, and then transfers the patterns to the chromium layer by ion beam etching (IBE) to gain the mask. A series of rigorous numerical simulations have been done on the light transmission rate of the mask and two parameters that may affect the contrast of interference patterns for parameter optimization. An interference lithography system was constructed with 257 nm laser light source, and patterns with feature size of 100 nm were developed. Then masks with period of 200 nm and line width of 100 nm were obtained by IBE.
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