Detection of electron loss due to Touschek effect in Hefei Light Source

The beam lifetime is an important parameter which can affect the operation of the storage ring. For Hefei Light Source(HLS), Touschek lifetime is an important factor affecting beam lifetime. To study the Touschek lifetime, the loss of electrons due to the Touschek effect should be detected. The concept of beam lifetime is introduced, and the theory of the Touschek effect is also discussed. The interaction between the lost electrons and vacuum chamber wall is simulated by the Monte Carlo software EGSnrc. The signals of the electron loss due to the Touschek effect are obtained with the plastic scintillation detector and then, sent to the discriminator and the coincidence gate, and finally the count rate is measured with a counter. The results indicate that the loss of electrons due to the To