Development of X-ray diode with high performance

hou lifei; yang guohong; liu shenye; wei minxi; yi tao; jiang shaoen; sun kexu

Volume 23 Issue 03

Mar. 2011

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Article Navigation > High Power Laser and Particle Beams > 2011 > 23(03): 0-

zhang wei-jun, yuan nai-chang, zhang wei. Receiving characteristics of time domain slot antenna array[J]. High Power Laser and Particle Beams, 2006, 18.

Citation:

hou lifei, yang guohong, liu shenye, et al. Development of X-ray diode with high performance[J]. High Power Laser and Particle Beams, 2011, 23.

zhang wei-jun, yuan nai-chang, zhang wei. Receiving characteristics of time domain slot antenna array[J]. High Power Laser and Particle Beams, 2006, 18.

Citation:

hou lifei, yang guohong, liu shenye, et al. Development of X-ray diode with high performance[J]. High Power Laser and Particle Beams, 2011, 23.

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Development of X-ray diode with high performance

1.
Research Center of Laser Fusion,CAEP,P.O.Box 919-986,Mianyang 621900,China

Publish Date: 2011-03-15

Abstract

Abstract

A new type of X-ray diode (XRD-Ⅱ) with ultrafast response time was developed. XRD-Ⅱ detector was improved on the basis of old XRD (XRD-Ⅰ), and its performances were studied on the 8ps laser facility. The results show that XRD-Ⅱ has excellent high-voltage tolerance (to 6 kV) and super-fast response time ( rise time is about 40 ps, and full width at half maximum (FWHM) is about 80 ps when bias voltage is 5 kV). The detector calibration was carried out on Beijing synchrotron radiation facility, which shows that the detector’s sensitivity has not deteriorated.
- x-ray diode,
- response time,
- impedance match,
- rise time,
- full width at half maximum

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