Influence of outmost layer on laser induced damage threshold of 1 064 nm highreflection mirrors

lu jiangtao; jiao hongfei; cheng xinbin; ma bin; ding tao; zhang jinlong; shen zhengxiang; zhou gang

Volume 23 Issue 04

Apr. 2011

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Article Navigation > High Power Laser and Particle Beams > 2011 > 23(04): 0-

qiu ying-wei, sun hong, tang jing-yu, et al. Voltage control loop for rapid cycling synchrotron digital low-level RF control[J]. High Power Laser and Particle Beams, 2008, 20.

Citation:

lu jiangtao, jiao hongfei, cheng xinbin, et al. Influence of outmost layer on laser induced damage threshold of 1 064 nm highreflection mirrors[J]. High Power Laser and Particle Beams, 2011, 23.

qiu ying-wei, sun hong, tang jing-yu, et al. Voltage control loop for rapid cycling synchrotron digital low-level RF control[J]. High Power Laser and Particle Beams, 2008, 20.

Citation:

lu jiangtao, jiao hongfei, cheng xinbin, et al. Influence of outmost layer on laser induced damage threshold of 1 064 nm highreflection mirrors[J]. High Power Laser and Particle Beams, 2011, 23.

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Influence of outmost layer on laser induced damage threshold of 1 064 nm highreflection mirrors

1.
Institute of Precision Optical Engineering,Tongji University,Shanghai 200092,China;
2.
Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology,Shanghai 200092,China;
3.
School of Aerospace Engineering and Applied Mechanics,Tongji University,Shanghai 200092,China

Publish Date: 2011-04-14

Abstract

Abstract

Electron beam evaporation method was applied to deposit three sets of 1 064 nm laser mirrors with different outmost layers: quarter-wavelength HfO2， half-wavelength SiO2 and quarterwavelength SiO2 layers, respectively. High reflectivity (more than 99.8%) has been achieved for all the stacks, and irradiated at normal incidence photothermal measurements of absorption are 3.0×10-6, 5.0×10-6 and 6.5×10－6, respectively. Corresponding laser induced damage thresholds (LIDTs) are 32.5 J/cm2, 45.2 J/cm2 and 28.4 J/cm2. The relations of electric field distribution, absorption, layer material characters and LIDT are also discussed．
- outmost layer,
- laser-induced damage threshold,
- electric field distribution,
- film absorption

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