wu heyun, wu yonggang, lü gang, et al. Preparation and characterization of free-standing polyimide/Zr film[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
wu heyun, wu yonggang, lü gang, et al. Preparation and characterization of free-standing polyimide/Zr film[J]. High Power Laser and Particle Beams, 2011, 23.
wu heyun, wu yonggang, lü gang, et al. Preparation and characterization of free-standing polyimide/Zr film[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
wu heyun, wu yonggang, lü gang, et al. Preparation and characterization of free-standing polyimide/Zr film[J]. High Power Laser and Particle Beams, 2011, 23.
Free-standing Zr film was prepared through direct-current magnetron sputtering. Polyimide (PI) film was prepared by a two-step process: After fully reaction between PMDA and ODA in DMAC, polyamic acid was produced; PI film was prepared when polyamic acid was thermally imidized. PI/Zr film was prepared through dip-coating PI film on Zr film. Based on the testing result from metrology beam-line station of National Synchrotron Radiation Center of University of Science and Technology of China, real transmittance fits with theoretical analysis fairly well. Although transmittance declines because of PI film, the Ni-like Ag soft X-ray transmittance of PI(200 nm)/Zr(300 nm) and PI(200 nm)/Zr(400 nm) films reaches 14.9% and 7.5% respectively at 13.9 nanometer.