Numerical simulation of 4H-SiC NMOS under electron and proton irradiation

The damage mechanism of 4H-SiC NMOS under high energy electron and proton irradiations was analyzed. The device’s physical model, electron irradiation model and proton irradiation model were established to simulate the drain current and irradiation effects with software ISE-TCAD. The variation of drain current with gate voltage and drain voltage was obtained for 4H-SiC NMOS irradiated by 2.5 MeV electron beam of 5×1013 cm-2 fluence and 6.5 MeV proton beam of 2×1014 cm-2 fluence, respectively. The simulation results are in good agreement with experimental ones under the same conditions.