Damage in optical components induced by high power semiconductor laser

guo ruhai; shi kui; wang hengkun; wang bing

Volume 23 Issue 05

Nov. 2012

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guo ruhai, shi kui, wang hengkun, et al. Damage in optical components induced by high power semiconductor laser[J]. High Power Laser and Particle Beams, 2011, 23.

Citation:

guo ruhai, shi kui, wang hengkun, et al. Damage in optical components induced by high power semiconductor laser[J]. High Power Laser and Particle Beams, 2011, 23.

guo ruhai, shi kui, wang hengkun, et al. Damage in optical components induced by high power semiconductor laser[J]. High Power Laser and Particle Beams, 2011, 23.

Citation:

guo ruhai, shi kui, wang hengkun, et al. Damage in optical components induced by high power semiconductor laser[J]. High Power Laser and Particle Beams, 2011, 23.

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Damage in optical components induced by high power semiconductor laser

1.
State Key Laboratory of Laser Interaction with Matter,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China

Publish Date: 2011-05-11

Abstract

Abstract

This paper investigates the damage in optical components induced by an 880 nm high-power semiconductor CW laser. The optical components irradiated are high-reflectivity or anti-reflectivity components based on K9 glass, oxygen free copper and ZnSe crystal. The power density of irradiation on component surface is adjusted by changing laser average power and spot size there, and each component is continuously irradiated for 30 s. The laser-induced damage morphology observed by microscope shows that, for K9 glass coated with high-reflectivity film, large-area ablation appears on the surface at the power density of 600 W/cm2 and burst at 1 000 W/cm2. However, no apparent damage is observed on the gilded oxygen free copper and the ZnSe crystal coated with anti-reflectivity film at th
- semiconductor laser,
- high power,
- laser-induced damage,
- power density

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