xiao shali, li miao, wang xi, et al. Accumulated-carrier screening effect based investigation for pixellated CdZnTe radiation detector[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
xiao shali, li miao, wang xi, et al. Accumulated-carrier screening effect based investigation for pixellated CdZnTe radiation detector[J]. High Power Laser and Particle Beams, 2011, 23.
xiao shali, li miao, wang xi, et al. Accumulated-carrier screening effect based investigation for pixellated CdZnTe radiation detector[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
xiao shali, li miao, wang xi, et al. Accumulated-carrier screening effect based investigation for pixellated CdZnTe radiation detector[J]. High Power Laser and Particle Beams, 2011, 23.
Using the pixellated CdZnTe detector, the radiation imaging experiment for the Rh target X-ray source was accomplished. The experimental results indicate that the response signals of the anode pixels, which distribute over the center irradiated area, are completely shut-off when the tube voltage is 45 kV and the tube current increases to 20 μA. Moreover, the non-response pixel area expands with the increase of the tube current, and the total event count of the CdZnTe detector reduces obviously. Furthermore, the inner electric potential and electric field distributions of the pixellated CdZnTe detector were simulated based on the Poisson equation. The simulation results reveal that the accumulation of the hole carriers, which results from the extremely low drift ability of the hole carrier