fan xue, li ping, li wei, et al. Single event effects on FPGA of californium-252 and heavy-ion accelerator[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
fan xue, li ping, li wei, et al. Single event effects on FPGA of californium-252 and heavy-ion accelerator[J]. High Power Laser and Particle Beams, 2011, 23.
fan xue, li ping, li wei, et al. Single event effects on FPGA of californium-252 and heavy-ion accelerator[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
fan xue, li ping, li wei, et al. Single event effects on FPGA of californium-252 and heavy-ion accelerator[J]. High Power Laser and Particle Beams, 2011, 23.
Single event effects (SEEs) test results on a static random access memory (SRAM)-based FPGA with 100 k system gates using californium-252 (252Cf) and the HI-13 tandem-accelerator are presented. The results including the static single event upset (SEU) cross-sections and the linear energy transfer (LET) threshold of single event latchup (SEL) were quantitatively compared and analyzed. The results showed that the SEU cross-sections using 252Cf were an order of magnitude less than the ones using the accelerator. SEL was not observed when the FPGA was exposed to the 252Cf, while SEL LET threshold could be measured when using the heavy-ion accelerator. Therefore, 252Cf is not an ideal radioactive source to test SEL of CMOS circuits fabricated with advanced technologies for experimental simulati
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