Laser diode-side-pumped high power 266 nm ultraviolet laser

li bin; yao jianquan; ding xin; zhang fan; wang peng

Volume 23 Issue 08

Sep. 2011

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li bin, yao jianquan, ding xin, et al. Laser diode-side-pumped high power 266 nm ultraviolet laser[J]. High Power Laser and Particle Beams, 2011, 23.

Citation:

li bin, yao jianquan, ding xin, et al. Laser diode-side-pumped high power 266 nm ultraviolet laser[J]. High Power Laser and Particle Beams, 2011, 23.

li bin, yao jianquan, ding xin, et al. Laser diode-side-pumped high power 266 nm ultraviolet laser[J]. High Power Laser and Particle Beams, 2011, 23.

Citation:

li bin, yao jianquan, ding xin, et al. Laser diode-side-pumped high power 266 nm ultraviolet laser[J]. High Power Laser and Particle Beams, 2011, 23.

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Laser diode-side-pumped high power 266 nm ultraviolet laser

1.
Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,College of Precision Instrument and Optoelectronics Engineering,Tianjin University,Tianjin 300072,China

Publish Date: 2011-09-13

Abstract

Abstract

An all-solid-state laser diode(LD)-side-pumped Nd:YAG ultraviolet(UV) laser at 266 nm is reported, which is based on fourth harmonic generation and adopts zigzag cavity structure. The type-Ⅰ critical phase matched LBO and BBO crystals are used as the second harmonic and fourth harmonic generation crystals, respectively, and 2.1 W UV laser of 266 nm with single pulse energy of 420 μJ is obtained at the pulse repetition rate of 5 kHz with the conversion efficiency of 13.13% from green to ultraviolet light. With V-shaped cavity configuration, only 305 mW 266 nm UV laser is obtained under the same condition.
- laser diode,
- side-pumping,
- fourth harmonic generation,
- zigzag cavity,
- type Ⅰ critical phase matching,
- bbo crystal,
- ultraviolet laser