xu qingjun, zhuang shendong. Study on Anderson localization of photonic crystal of GaAs based on Mie scattering theory[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
xu qingjun, zhuang shendong. Study on Anderson localization of photonic crystal of GaAs based on Mie scattering theory[J]. High Power Laser and Particle Beams, 2011, 23.
xu qingjun, zhuang shendong. Study on Anderson localization of photonic crystal of GaAs based on Mie scattering theory[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
xu qingjun, zhuang shendong. Study on Anderson localization of photonic crystal of GaAs based on Mie scattering theory[J]. High Power Laser and Particle Beams, 2011, 23.
Based on the Mie scattering theory and the low density approximation, the Anderson localization parameters of photonic crystal constituted by GaAs were calculated theoretically, and the factors which influenced the localization phenomenon were analyzed. The results show that strict Anderson localization phenomena appear in far infrared region (50~65 μm) under the conditions of volumetric percentage of 10% and relative refractive index greater than 3.8. With the increase of the scatterer radius, the localization area shifts to longer wavelength, and the localization parameter firstly increases and then decreases.
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