jiang teng-jiao, huang wei, qi wen-zong, et al. Ｔhin film weak absorption of 3.8μm and 2.8μm laser measured by surface thermal lensing technique[J]. High Power Laser and Particle Beams, 2004, 16.
Citation:
jiang teng-jiao, huang wei, qi wen-zong, et al. Ｔhin film weak absorption of 3.8μm and 2.8μm laser measured by surface thermal lensing technique[J]. High Power Laser and Particle Beams, 2004, 16.
jiang teng-jiao, huang wei, qi wen-zong, et al. Ｔhin film weak absorption of 3.8μm and 2.8μm laser measured by surface thermal lensing technique[J]. High Power Laser and Particle Beams, 2004, 16.
Citation:
jiang teng-jiao, huang wei, qi wen-zong, et al. Ｔhin film weak absorption of 3.8μm and 2.8μm laser measured by surface thermal lensing technique[J]. High Power Laser and Particle Beams, 2004, 16.
Ｕsing the surface thermal lensing technique, weak absorption of different optical thin films, including the single-layer ZnS and YbF3 dielectric thin films with different thickness, as well as the different multilayer thin films YbF3/ZnS deposited on Si, and multilayer antireflectivity thin films YbF3/ZnS deposited on CaF2 window has been measured. The experimental results of films irradiated by 3.8μm and 2.8μm lasers have been compared and analyzed. The experimental results show that absorption at 2.8μm, is much greater than the one at 3.8μm,and the difference between them is one order of magnitude. The lowest absorption at 3.8μm is 4.57×10－4, and the system sensitivity is 10－５ level．
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