shen yan-ming, he hong-bo, shao shu-ying, et al. Influences of deposition temperature on residual stress of HfO2 films[J]. High Power Laser and Particle Beams, 2005, 17.
Citation:
shen yan-ming, he hong-bo, shao shu-ying, et al. Influences of deposition temperature on residual stress of HfO2 films[J]. High Power Laser and Particle Beams, 2005, 17.
shen yan-ming, he hong-bo, shao shu-ying, et al. Influences of deposition temperature on residual stress of HfO2 films[J]. High Power Laser and Particle Beams, 2005, 17.
Citation:
shen yan-ming, he hong-bo, shao shu-ying, et al. Influences of deposition temperature on residual stress of HfO2 films[J]. High Power Laser and Particle Beams, 2005, 17.
HfO2 films were prepared by electron beam evaporation. The residual stress was measured by ZYGO interferometer. The results showed that the residual stresses of HfO2 films were tensile and increased with the increase of deposition temperature firstly, then decreased. The microstructure of the HfO2 films was inspected with X-ray diffraction (XRD). The microstructure of the films transmitted from amorphous to polycrystalline, which corresponded to the variation of the residual stress. The microstructure of HfO2 film changed as the deposition temperature increased and the residual stress evolved as the changing of the microstructure.