Preparation methods and processing of CHN films

A group of amorphous CHN films were fabricated successfully by hollow cathode plasma chemical vapor deposition with ammonia, hydrogen and methane as reacting gas. The variation of deposition rate as a function of DC voltage and reactive gas flows were studied, respectively. The nitrogen content in terms of atomic percentage under different conditions was identified by X-ray photoelectron spectra (XPS).The surface roughness and surface morphology were measured and presented by atomic force microscope (AFM). The results show that the actual nitrogen content in the films can be as much as 12%, the surface morphology is smooth and dense and the surface roughness is lower than 1 nm.