Numerical simulation of long-term radiation effects for MOSFETs

Wei Yuan; Xie Honggang; Gong Ding; Zhu Jinhui; Niu Shengli; Huang Liuxing

Volume 25 Issue 04

Mar. 2013

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Article Navigation > High Power Laser and Particle Beams > 2013 > 25(04): 1031-1034

shen yong-ming, zhang yao-fei, hou tian-jin, et al. Comparisons of temperature field and stress field between heat-capacity laser and solid steady state laser[J]. High Power Laser and Particle Beams, 2006, 18.

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Wei Yuan, Xie Honggang, Gong Ding, et al. Numerical simulation of long-term radiation effects for MOSFETs[J]. High Power Laser and Particle Beams, 2013, 25: 1031-1034.

Citation:

Wei Yuan, Xie Honggang, Gong Ding, et al. Numerical simulation of long-term radiation effects for MOSFETs[J]. High Power Laser and Particle Beams, 2013, 25: 1031-1034.

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Numerical simulation of long-term radiation effects for MOSFETs

1.
Northwest Institute of Nuclear Technology,P.O.Box 69-12,Xi’an 710024,China

Received Date: 2012-08-24
Rev Recd Date: 2012-11-14
Publish Date: 2013-03-09

Abstract

Abstract

A coupled algorithm is introduced to simulate the long-term radiation effects of MOSFETs, which combines particle transport with semiconductor governing equations. The former is dealt with Monte-Carlo method, and the latter is solved by finite-volume method. The trapped charge in SiO2 and the free charge in Si are both described by the drift-diffusion model, and the deposited energy by incident particles can be coupled with the continuous equations of charge, acting as a source item. The discrete form of governing equations is obtained using the finite-volume method, and the numerical solutions of these equations are the long-term radiation response result of MOSFETs. The threshold voltage shift and off-state leakage current of an irradiated MOSFET are simulated with the coupled algorithm respectively, showing a good accordance with results by other calculations.
- long-term radiation effects,
- total dose effects,
- leakage current,
- coupled algorithm long-term radiation effects

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