Numerical simulation of semiconductor opening switch

he feng; su jian-cang; li yong-dong; liu chun-liang; sun jian

Volume 17 Issue 12

Dec. 2005

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he feng, su jian-cang, li yong-dong, et al. Numerical simulation of semiconductor opening switch[J]. High Power Laser and Particle Beams, 2005, 17.

Citation:

he feng, su jian-cang, li yong-dong, et al. Numerical simulation of semiconductor opening switch[J]. High Power Laser and Particle Beams, 2005, 17.

he feng, su jian-cang, li yong-dong, et al. Numerical simulation of semiconductor opening switch[J]. High Power Laser and Particle Beams, 2005, 17.

Citation:

he feng, su jian-cang, li yong-dong, et al. Numerical simulation of semiconductor opening switch[J]. High Power Laser and Particle Beams, 2005, 17.

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Numerical simulation of semiconductor opening switch

1.
Key Laboratory for Physical Electronics and Devices of the Ministry of Education,Xi'an Jiaotong University,Xi'an 710049,China;
2.
Northwest Institute of Nuclear Technology,Xi'an 710024,China

Publish Date: 2005-12-15

Abstract

Abstract

A current-controlled model of semiconductor opening switch(SOS) was developed to study the current opening effect and the physical process of SOS in pulsed power system. The p+-p-n-n+ type SOS was analyzed on the basis of the model. The distributions of carriers and field in SOS were simulated during forward and reverse current pumping, and the current opening effect was obtained. The results show that the opening process starts first at the p-type region.
- semiconductor opening switch,
- current opening effect,
- pulsed power,
- numerical simulation

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