Abstract: A thorough performance analysis of a type of sensing element, which is designed and manufactured for application to high power terahertz pulse measurement based on hot electrons effect in semiconductor, is carried out by measuring the geometric and electric parameters. Sensing elements achieve a little deviation from the optimal value and an excellent ohmic touch. The deviation of the sensing element has little effect on the relative sensitivity, as the simulation result shows. Validity of the manufacturing techniques for the sensing element is proved by making a synthesis of all the parameters during the whole course of the measurement.