Calculation of pulse X-ray spectrum field generated by intense diode
-
摘要: 利用二极管的电压电流波形计算了电子束参数，建立了串级二极管和四路并联二极管阳极靶蒙特卡罗粒子输运计算模型，给出了两种情况下轫致辐射X射线场参数。结果表明：阳极靶厚度增加时，轫致辐射X射线平均能量增大，而能量转换效率先增大，后减小；距离串级二极管和四路并联二极管阳极靶5 cm位置处，X射线注量分别为76.50，3.74 mJ/cm2；光子平均能量分别为81.13，60.77 keV；半径为12 cm的圆面上，串级二极管X射线剂量呈马鞍形分布，均匀性为1.70∶1；边长为52 cm的正方形平面上，四路并联二极管X射线剂量均匀性小于6.30∶1；电子束轫致辐射转换效率分别为0.29％，0.32％。Abstract: Electron energy distribution was calculated according to current and voltage waveforms. The characteristics of X-ray spectrum in series diode and four-channel parallel diode were calculated using Monte Carlo simulation model. The numerical results indicate that the total energies of X-ray fluence of two diodes are 76.50, 3.74 mJ/cm2 respectively; average photon energies are 81.13, 60.77 keV respectively. The dose distribution of series diode in a surface is saddle shape, and the dose uniformity of two diodes in 452 and 2700 cm2 areas is 1.70∶1, less than 6.30∶1 respectively. Bremsstrahlung conversion efficiency of electron beams in the two diodes is 0.29%, 0.32% respectively.
-
Key words:
- series diode /
- parallel diode /
- X-ray source /
- Monte Carlo method
-
点击查看大图
计量
- 文章访问数: 1666
- HTML全文浏览量: 366
- PDF下载量: 436
- 被引次数: 0
下载:
