Abstract: The super-fast pulse semiconductor device introduced in this article, is a kind of punch-through device with voltage up to 5000 V and current rise rate above 20 kA/s. Through matching with parameters, the pulse peak current can reach several hundreds of kA. The multiple-round-cell integrated structure and the diffusion technology which combines buffer layer and anode transparent layer, make the device has advantages compared with traditional thyristors in voltage drop and turn-on characteristics. This super-fast pulse semiconductor device which has been optimized on design and process technology, can meet the production condition.