Error analysis of drift-diffusion model of semiconductor device numerical simulation
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摘要: 为了确定数值模拟过程中的误差来源，并针对误差来源改进软件，减小计算误差，对半导体器件数值模拟中的采用的漂移扩散模型进行了研究。结合自主开发的半导体器件效应软件GSRES，分析了软件中漂移扩散模型的理论近似，对计算模型中由于温度分布、载流子复合/产生率、载流子迁移率等项采取近似而导致的误差进行了分析。根据误差分析和数值模拟算例，认为误差主要来自于器件内部温度场分布和迁移率模型的近似，给出了软件的适用范围。结合半导体器件的研究热点和发展趋势，对该模型中需要进行改进的近似项进行了分析。Abstract: In order to identify and reduce the numerical errors of semiconductor simulator GSRES, drift-diffusion model used in numerical simulation of semiconductor device is studied. Numerical approximation in semiconductor device HPM effect simulator GSRES is analyzed. To build a full physical semiconductor model, Numerical errors caused by approximation of distribution of temperature field in lattice, approximation of recombination rate and generation rate are studied. Application range of simulator is analyzed according to the numerical errors caused by approximation. Terms of the model that need to be improved and enhanced are given.
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Key words:
- drift-diffusion model /
- semiconductor /
- numerical simulation /
- error analysis
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