PIC simulation of high efficient injection of intense relative multi-beam
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摘要: 强流相对论多注速调管相对于单注速调管具有导流系数低，输出功率高和效率高的优点，并且可以明显降低引导磁场强度，因此得到快速发展。但是其多注电子束引入漂移管效率低的问题，影响了多注速调管的整管效率，限制了其稳定高效运行和应用推广。论文采用粒子仿真软件CHIPIC对多注速调管二极管爆炸发射过程进行仿真研究，寻找影响多注速调管引入效率的主要因素，并对阴极结构进行了优化，设计出三种两段式新型多注阴极结构并进行冷阴极爆炸发射模拟研究。研究结果表明：给定参数下，常规结构由于底座边缘的不必要的环形电子束发射，只能达到82%的引入效率，而三种新型阴极结构通过抑制不必要电子发射，引入效率都可以提高至95%以上，最高达到99%。Abstract: This paper presents a simulation study on intense relative multi-beams(IRMBs) electron explosive emission and structure optimizing of cathodes in the relative klystron amplifier(RKA) diode with PIC simulation software. Three new kinds of structures for multi-beam cathodes are introduced. The result shows that, the traditional structure cathode could only get the injection coefficient of IRMBs up to 82%, while the new structure cathode could increase it to more than 95%, even 99%. This research gives a solution to the problem of low injection coefficient in the multi-beams RKA.
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