Design of X~Ku band broadband driver amplifier
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摘要: 基于SiC衬底的0.25 μm GaN HEMT工艺，设计了一款X~Ku波段宽带1 W驱动放大器单片微波集成电路。设计使用了一种有源器件的大信号输出阻抗的等效RC模型验证了GaN HEMT工艺模型的准确性，并获得了不同尺寸的GaN HEMT的大信号输出阻抗。第一级管芯采用负反馈结构，降低匹配网络的Q值，通过带通匹配网络拓扑，实现了宽带匹配。测试结果表明，在28 V的工作电压下，8~18 GHz的频率内驱动放大器实现了输出功率大于30 dBm，功率附加效率大于21%，功率增益大于15 dB。芯片尺寸为：2.20 mm×1.45 mm。该芯片电路具有频带宽、效率高、尺寸小的特点，主要用于毫米波收发组件、无线通讯等领域，具有广泛的应用前景。Abstract: In this paper, an X~Ku band broadband 1 W driver amplifier MMIC based on 0.25 μm GaN HEMT on SiC process is designed. The design uses an equivalent RC model of active devices' large-signal output impedance for verifying the accuracy of the GaN HEMT process model. And large-signal output impedances of GaN HEMT with different dimensions are achieved. Negative feedback structure is applied for the first-stage transistor to reduce the Q value of the matching network. The broadband matching is successfully achieved through band-pass matching network topology. The measurement results show that this driver amplifier at 28 V operation voltage achieved over 30 dBm output power, 21% power added efficiency and 15 dB power gain from 8 GHz to 18 GHz. The chip size is 2.20 mm×1.45 mm. The MMIC chip has the characteristics of wide bandwidth, high efficiency and small size. It can be mainly used in fields such as millimeter-wave transceiver components and wireless communication, and has broad application prospect.
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Key words:
- X~Ku band /
- GaN /
- driver power /
- negative feedback /
- MMIC
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图 3 8~18 GHz效率点阻抗RC模型、测试数据和GaN HEMT PDK模型比较
Figure 3. Comparison of 8~18 GHz efficiency point impedance with RC model, measured and with GaN HEMT PDK model
图 8 输出功率、增益和功率附加效率随频率变化的测试结果
Figure 8. Measured output power, gain, and PAE versus frequency
图 9 小信号增益和输入反射系数随频率变化的测试结果
Figure 9. Measured small signal gain and input reflection coefficient versus frequency
图 10 在17 GHz的输出功率、功率增益和功率附加效率随输入功率变化的测试结果
Figure 10. Measured output power, gain, and PAE versus input power at 17 GHz frequency
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