[1]
|
孙承纬,陆启生,范正修,等.激光辐照效应[M].北京:国防工业出版社, 2002.(Sun Chengwei, Lu Qisheng, Fan Zhengxiu, et al. Effect of laser irradiation. Beijing:National Defend Industry Press, 2002) |
[2]
|
Li Zewen, Zhang Hongchao, Shen Zhonghua, et al. Time-resolved temperature measurement and numerical simulation of millisecond laser irradiated silicon[J]. Journal of Applied Physics, 2013, 114:033104. |
[3]
|
Bertolotti M, Sette D, Stagni L, et al. Electron microscope observation of laser damage on GaAs, GaSb and InSb[J]. Radiation Effects, 1972, 16(3/4):197-202. |
[4]
|
Kmar A, Gupta S K, Taneja G, et al. Laser induced damage in GaAs at 1.06μm wavelength:surface effects[J]. Optics & Laser Technology, 1996, 28(1):25-34. |
[5]
|
Singh A P, Kapoor A, Tripathi K N. Ripples and grain formation in GaAs surfaces exposed to ultrashort laser pulses[J]. Optics & Laser Technology, 2002, 34(7):533-540. |
[6]
|
舒柏宏,侯静.砷化镓材料与激光相互作用的实验研究[J].红外与激光工程, 1999, 28(1):40-42.
(Shu Bohong, Hou Jing. Experimental study of the interaction between laser and GaAs. Infrared and Laser Engineering, 1999, 28(1):40-42) |
[7]
|
Qi Haifeng, Wang Qingpu, Li Yongfu, et al. Thermal process and surface damage of GaAs induced by 532 nm continuous laser[J]. Applied Surface Science, 2007, 254(5):1373-1376. |
[8]
|
Bi J, Jin G Y, Ni X W, et al. Analysis of 532 nm long pulse laser-induced thermal decomposition damage to GaAs by semi-analytical method[J]. Acta Physica Sinica, 2012, 61:244209. |
[9]
|
曾交龙,陆启生,舒柏宏,等.1.06μm连续与脉冲激光对GaAs材料的联合破坏效应[J].强激光与粒子束, 1998, 10(2):217-220.
(Zeng Jiaolong, Lu Qisheng, Shu Bohong, et al. Combined damage effect of GaAs irradiated by 1.06μm CW and pulse laser. High Power Laser and Particle Beams, 1998, 10(2):217-220) |
[10]
|
李柏华.毫秒激光致砷化镓材料损伤研究[D].南京:南京理工大学, 2017.(Li Bohua. Study on damage of GaAs material induced by millisecond laser. Nanjing:Nanjing University of Science & Technology, 2017) |
[11]
|
强希文,刘峰,张建泉.脉冲强激光辐照半导体材料损伤效应的解析研究[J].光电子技术, 2000, 20(1):52-58.
(Qiang Xiwen, Liu Feng, Zhang Jianquan. An analytical investigation on semiconductor material damage induced by pulsed high-power laser beams. Optoelectronic Technology, 2000, 20(1):52-58) |
[12]
|
亚当斯A R.砷化+镓的性质[M].北京:科学出版社, 1990.(Adams A R. Properties of GaAs. Beijing:Science Press, 1990) |
[13]
|
王建利,牛沈军,兰天平,等.砷化镓材料[J].科技创新导报, 2010(32):75-77.(Wang Jianli, Niu Shenjun, Lan Tianping, et al. GaAs materials.Science and Technology Innovation Herald, 2010
(32):75-77) |
[14]
|
常本康.GaAs光电阴极[M].北京:科学出版社, 2012.(Chang Benkang. GaAs photocathode. Beijing:Science Press, 2012) |
[15]
|
Meyer J R, Kruer M R, Bartoli F J. Optical heating in semiconductors:Laser damage in Ge, Si, InSb, and GaAs[J]. Journal of Applied Physics, 1980, 51(10):5513. |
[16]
|
Hjort K, Soderkvist J, Schweitz J A. Gallium arsenide as a mechanical material[J]. Journal of Micromechanics and Microengineering, 1994, 4(1):1-13. |
[17]
|
强希文,张建泉,刘峰,等.强激光辐照半导体材料的温升及热应力损伤的理论研究[J].中国激光, 2000, 27(8):709-713.
(Qiang Xiwen, Zhang Jianquan, Liu Feng, et al. Thermal stress damage of semiconductors induced by laser beam. Chinese Journal of Lasers, 2000, 27(8):709-713) |
[18]
|
祁海峰.连续及纳秒激光对砷化镓材料的损伤研究[D].济南:山东大学, 2008.(Qi Haifeng. Damage of GaAs by CW and nanosecond laser. Ji'nan:Shandong University, 2008) |