Damage threshold of GaAs cathode material by driving laser
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摘要: 砷化镓作为优秀的光电发射材料，被广泛应用于制备阴极材料。砷化镓通常用到的驱动激光是532 nm连续波激光，在相同平均功率的情况下比纳秒脉冲激光的峰值功率低很多，因此在有某些超大电荷量的需求时，就不能避免使用高峰值功率激光照射。所以在砷化镓阴极的使用过程中，需要对其损伤阈值进行测量。基于上述背景，首先通过数值计算得到砷化镓材料的激光损伤阈值，再通过软件模拟加以验证，最后结合实验分析比较其差异。其中数值计算结果为17.811 MW/cm2，模拟结果为19 MW/cm2，而实验结果为13.5 MW/cm2。经过合理的分析，认为砷化镓在作为光阴极材料时的损伤阈值会进一步降低。Abstract: As an excellent photoemission material, GaAs is widely used to prepare cathode materials.Gallium arsenide is usually driven by 532 nm CW laser, which has much lower peak power than the nanosecond pulsed laser at the same average power. Therefore, high peak power laser irradiation can not be avoided when there is a need for some supercharges. Therefore, in the process of using GaAs cathode, it is necessary to measure its damage threshold.Based on the above background, the laser damage threshold of GaAs material is first obtained by calculation, then verified by software simulation. Finally, the difference is analyzed and compared with the experimental results. The numerical result is 17.811 MW/cm2, the simulation result is 19 MW/cm2, and the experimental result is 13.5 MW/cm2. After reasonable analysis, it is believed that the damage threshold of GaAs as photocathode material will be further reduced.
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Key words:
- GaAs cathode /
- nanosecond laser /
- laser damage /
- thermal analysis
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图 1 (a) 在脉冲激光作用时间内不同激光功率密度导致材料表面的温度变化; (b)瞬态最高温度与激光功率密度的关系
Figure 1. (a) Temperature variation of material surface caused by different laser power density during pulsed laser irradiation; (b) Relation between transient maximum temperature and laser power density
图 2 最大拉伸应力与温度的关系图
Figure 2. Relation diagram of maximum tensile stress and temperature
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[1] 孙承纬, 陆启生, 范正修, 等. 激光辐照效应[M]. 北京: 国防工业出版社, 2002.Sun Chengwei, Lu Qisheng, Fan Zhengxiu, et al. Effect of laser irradiation. Beijing: National Defend Industry Press, 2002 [2] Li Zewen, Zhang Hongchao, Shen Zhonghua, et al. Time-resolved temperature measurement and numerical simulation of millisecond laser irradiated silicon[J]. Journal of Applied Physics, 2013, 114: 033104. doi: 10.1063/1.4815872 [3] Bertolotti M, Sette D, Stagni L, et al. Electron microscope observation of laser damage on GaAs, GaSb and InSb[J]. Radiation Effects, 1972, 16(3/4): 197-202. [4] Kmar A, Gupta S K, Taneja G, et al. Laser induced damage in GaAs at 1.06 μm wavelength: surface effects[J]. Optics & Laser Technology, 1996, 28(1): 25-34. [5] Singh A P, Kapoor A, Tripathi K N. Ripples and grain formation in GaAs surfaces exposed to ultrashort laser pulses[J]. Optics & Laser Technology, 2002, 34(7): 533-540. [6] 舒柏宏, 侯静. 砷化镓材料与激光相互作用的实验研究[J]. 红外与激光工程, 1999, 28(1): 40-42. doi: 10.3969/j.issn.1007-2276.1999.01.010Shu Bohong, Hou Jing. Experimental study of the interaction between laser and GaAs. Infrared and Laser Engineering, 1999, 28(1): 40-42 doi: 10.3969/j.issn.1007-2276.1999.01.010 [7] Qi Haifeng, Wang Qingpu, Li Yongfu, et al. Thermal process and surface damage of GaAs induced by 532 nm continuous laser[J]. Applied Surface Science, 2007, 254(5): 1373-1376. doi: 10.1016/j.apsusc.2007.06.051 [8] Bi J, Jin G Y, Ni X W, et al. Analysis of 532 nm long pulse laser-induced thermal decomposition damage to GaAs by semi-analytical method[J]. Acta Physica Sinica, 2012, 61: 244209. doi: 10.7498/aps.61.244209 [9] 曾交龙, 陆启生, 舒柏宏, 等. 1.06 μm连续与脉冲激光对GaAs材料的联合破坏效应[J]. 强激光与粒子束, 1998, 10(2): 217-220. http://www.hplpb.com.cn/article/id/867Zeng Jiaolong, Lu Qisheng, Shu Bohong, et al. Combined damage effect of GaAs irradiated by 1.06 μm CW and pulse laser. High Power Laser and Particle Beams, 1998, 10(2): 217-220 http://www.hplpb.com.cn/article/id/867 [10] Li Bohua. Study on damage of GaAs material induced by millisecond laser. Nanjing: Nanjing University of Science & Technology, 2017 [11] 强希文, 刘峰, 张建泉. 脉冲强激光辐照半导体材料损伤效应的解析研究[J]. 光电子技术, 2000, 20(1): 52-58. https://www.cnki.com.cn/Article/CJFDTOTAL-GDJS200001012.htmQiang Xiwen, Liu Feng, Zhang Jianquan. An analytical investigation on semiconductor material damage induced by pulsed high-power laser beams. Optoelectronic Technology, 2000, 20(1): 52-58 https://www.cnki.com.cn/Article/CJFDTOTAL-GDJS200001012.htm [12] 亚当斯A R. 砷化+镓的性质[M]. 北京: 科学出版社, 1990.Adams A R. Properties of GaAs. Beijing: Science Press, 1990 [13] 王建利, 牛沈军, 兰天平, 等. 砷化镓材料[J]. 科技创新导报, 2010(32): 75-77. https://www.cnki.com.cn/Article/CJFDTOTAL-ZXDB201032066.htmWang Jianli, Niu Shenjun, Lan Tianping, et al. GaAs materials. Science and Technology Innovation Herald, 2010(32): 75-77 https://www.cnki.com.cn/Article/CJFDTOTAL-ZXDB201032066.htm [14] 常本康. GaAs光电阴极[M]. 北京: 科学出版社, 2012.Chang Benkang. GaAs photocathode. Beijing: Science Press, 2012 [15] Meyer J R, Kruer M R, Bartoli F J. Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAs[J]. Journal of Applied Physics, 1980, 51(10): 5513. [16] Hjort K, Soderkvist J, Schweitz J A. Gallium arsenide as a mechanical material[J]. Journal of Micromechanics and Microengineering, 1994, 4(1): 1-13. [17] 强希文, 张建泉, 刘峰, 等. 强激光辐照半导体材料的温升及热应力损伤的理论研究[J]. 中国激光, 2000, 27(8): 709-713. https://www.cnki.com.cn/Article/CJFDTOTAL-JJZZ200008008.htmQiang Xiwen, Zhang Jianquan, Liu Feng, et al. Thermal stress damage of semiconductors induced by laser beam. Chinese Journal of Lasers, 2000, 27(8): 709-713 https://www.cnki.com.cn/Article/CJFDTOTAL-JJZZ200008008.htm [18] 祁海峰. 连续及纳秒激光对砷化镓材料的损伤研究[D]. 济南: 山东大学, 2008.Qi Haifeng. Damage of GaAs by CW and nanosecond laser. Ji'nan: Shandong University, 2008 -
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