Compact model of millimeter wave noise in nano-MOSFET
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摘要: 为了使复杂的纳米MOSFET毫米波噪声物理模型可用于工程设计，研究了其简洁模型的表达形式。通过器件的双端口相关噪声矩阵变换和分析，实现了复杂的噪声物理模型的简化。所提出的简洁模型不仅高精度地表征了器件的非准静态效应，并且可通过Verilog-A语言以四结点的形式，直接嵌入到ADS仿真设计工具，从而在保证精度的同时，大大降低了设计的复杂度。实验结果验证了所建模型在强反型区和弱反型区均比现有的三结点模型具有更高的准确性。Abstract: In order to apply the complex physical model of millimeter-wave noise of nano-MOSFET to engineering design, the expression of its compact model is studied. The complex noise physical model is simplified by transforming and analyzing the two-port correlation noise matrix of the device. The compact model proposed here not only expresses the non-quasi-static effect of the device with high precision, but also can be directly embedded into the ADS simulation design tool by Verilog-A language in the form of four nodes, thus ensuring the accuracy and greatly reducing the design complexity. The experimental results show that the proposed model is more accurate in both strong and weak inversion regions than the existing three-node model.
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Key words:
- nanometer MOSFET /
- millimeter wave /
- two-port network /
- non-quasi-static effect
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图 1 MOSFET的二端口相关等效噪声电流模型
Figure 1. Two-port correlated equivalent noise current model for MOSFET
图 2 MOSFET四结点相关噪声模型的Verilog-A代码
Figure 2. Verilog-A code for four-node correlated noise model of MOSFET
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