High power microwave effect of PIN limiter induced by single pulse
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摘要: 基于PIN限幅器的等效电路模型，构建了PIN限幅器HPM效应ADS等效电路仿真模型，利用HPM注入实验和等效电路仿真相结合的方法，研究了单个微波脉冲作用下PIN限幅器的响应规律，获取了HPM作用结束后限幅器限幅持续时间与注入脉冲功率、脉宽的对应关系，并对限幅器的限幅持续过程进行了分析。仿真与实验结果表明：PIN限幅器限幅持续时间随着微波脉冲功率和脉宽的增大而变大，实验和仿真结果趋势一致，该研究使用的ADS等效电路模型可以应用于PIN限幅器的高功率微波瞬态响应特性分析研究。Abstract: On the basis of equivalent circuit of PIN limiter, we constructed an equivalent circuit model for the simulation of high power microwave effect of PIN limiter. The response property of PIN limiter under the excitation of single high power microwave pulse is studied by using the equivalent circuit model and injection experiment. The evolution of the limiting duration with the injected pulse power and pulse width of the HPM is obtained. In addition, the limiting duration process is theoretically analyzed. Both the simulation and experiment show that: the limiting duration of the PIN limiter increases with the increase of the input power and pulse width of a single high microwave pulse. The experiment matches simulation very well. The ADS equivalent circuit model used in this study can be extended to investigate the transient effect of high power microwave.
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Key words:
- PIN limiter /
- high power microwave effect /
- limiting duration /
- response property
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图 2 高功率微波信号作用下小信号变化示意图
Figure 2. Schematic illustrating the change of small signal under the excitation of high power microwave
图 3 CLA4601型PIN二极管I区等效电路图
Figure 3. Equivalent circuit of I layer for CLA4601 PIN diode
图 5 不同输入脉宽条件下相对脉冲展宽随输入功率的变化
Figure 5. The change of relative pulse broadening with input power under different input pulse width
图 6 高功率微波注入实验原理图
Figure 6. Schematic diagram for high power microwave injection experiment
图 8 注入实验中示波器测得的典型波形
Figure 8. Typical waveform recorded by digital oscilloscope in the experiment
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[1] 赵振国, 周海京, 马弘舸, 等. PIN限幅器电磁脉冲效应数值模拟与验证[J]. 强激光与粒子束, 2014, 26:063018. (Zhao Zhenguo, Zhou Haijing, Ma Hongge, et al. Numerical simulation and verification of electromagnetic pulse effect of PIN diode limiter[J]. High Power Laser and Particle Beams, 2014, 26: 063018 doi: 10.11884/HPLPB201426.063018 [2] Caverly R H, Hiller G. Understanding and modeling the non-monotonic attenuation behavior of PIN diodes[J]. IEEE MTT-S Digest, 1998: 849-852. [3] 赵振国, 马弘舸, 赵刚, 等. PIN限幅器微波脉冲热损伤温度特性[J]. 强激光与粒子束, 2013, 25(7):1741-1746. (Zhao Zhenguo, Ma Hongge, Zhao Gang, et al. Research on characteristics of temperature during PIN limiter thermal damage caused by microwaves[J]. High Power Laser and Particle Beams, 2013, 25(7): 1741-1746 doi: 10.3788/HPLPB20132507.1741 [4] 赵振国, 周海京, 马弘舸, 等. 微波脉冲频率与重频对限幅器热损伤效应的影响[J]. 强激光与粒子束, 2015, 27:103239. (Zhao Zhenguo, Zhou Haijing, Ma Hongge, et al. Influence of frequency and microwave repetition rate on thermal damage process of PIN limiter[J]. High Power Laser and Particle Beams, 2015, 27: 103239 doi: 10.11884/HPLPB201527.103239 [5] Bera S C, Bharadhwaj P S. Insight into PIN diode behaviour leads to improved control circuit[J]. IEEE Trans Circuits & Systems, 2005, 52(1): 124. [6] 马振洋, 柴常春, 任兴荣, 等. 双极性晶体管损伤效应与机理[J]. 物理学报, 2012, 61:078051. (Ma Zhenyang, Chai Changchun, Ren Xingrong, et al. The damage effect and mechanism of the bipolar transistor caused by microwaves[J]. Acta Physica Sinica, 2012, 61: 078051 [7] 陈曦. 微波脉冲对射频前端中半导体器件的效应[D]. 北京: 清华大学, 2011.Chen Xi. Effect of microwave pulse on semiconductor devices in RF front end[D]. Beijing: Tsinghua University, 2011 [8] 汪海洋, 李家胤, 周翼鸿, 等. PIN限幅器Pspice模拟与实验研究[J]. 强激光与粒子束, 2006, 18(1):88-92. (Wang Haiyang, Li Jiayin, Zhou Yihong, et al. Experimental study and Pspice simulation of PIN diode limiter[J]. High Power Laser and Particle Beams, 2006, 18(1): 88-92 [9] Wang Haiyang. Theoretical and experimental study of high-power microwave effects mechanism[J]. Chengdu: University of Electronic Science and Technology of China, 2009: 56-90. [10] 王波, 黄卡玛. 大功率PIN二极管限幅器对电磁脉冲后沿响应的分析[J]. 强激光与粒子束, 2008, 20(7):1177-1181. (Wang Bo, Huang Kama. Response of high power PIN diode limiter to electromagnetic pulse descending edge[J]. High Power Laser and Particle Beams, 2008, 20(7): 1177-1181 [11] 张海, 杨晓炜, 江舸, 等. 受损限幅器的非线性效应对成像雷达的影响[J]. 强激光与粒子束, 2015, 27:103238. (Zhang Hai, Yang Xiaowei, Jiang Ge, et al. Nonlinear effect of impaired limiter on synthetic aperture radar[J]. High Power Laser and Particle Beams, 2015, 27: 103238 doi: 10.11884/HPLPB201527.103238 [12] Chen Xing, Chen Junquan, Huang Kama, et al. A circuit simulation method based on physical approach for the analysis of Mot_bal99lt1 pin diode circuits[J]. IEEE Trans Electron Devices, 2011, 58(9): 2862-2870. doi: 10.1109/TED.2011.2159009 [13] 李勇, 宣春, 谢海燕, 等. 电磁脉冲作用下PIN二极管的响应[J]. 强激光与粒子束, 2013, 25(8):2061-2066. (Li Yong, Xuan Chun, Xie Haiyan, et al. Response of PIN diode to electromagnetic pulse[J]. High Power Laser and Particle Beams, 2013, 25(8): 2061-2066 doi: 10.3788/HPLPB20132508.2061 [14] 宣春, 贡顶, 谢海燕, 等. 半导体器件/电路混合模拟及其在HPM效应中的应用[J]. 微电子学, 2009, 39(3):424-428. (Xuan Chun, Gong Ding, Xie Haiyan, et al. Semiconductor device/circuit mixed-type simulation and its application in HPM effects[J]. Microelectronics, 2009, 39(3): 424-428 [15] 王文祥. 微波工程技术[M]. 北京: 国防工业出版社, 2009.Wang Wenxiang. Microwave engineering technology[M]. Beijing: National Defense Industry Press, 2009 -
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