快速关断半导体开关工作特性及实验研究

王淦平; 李飞; 金晓; 宋法伦; 张琦

doi:10.11884/HPLPB202032.190298

快速关断半导体开关工作特性及实验研究

doi: 10.11884/HPLPB202032.190298

王淦平^{1, 2,},
李飞¹,
金晓¹,
宋法伦¹,
张琦^{1, 2}

1.
中国工程物理研究院应用电子学研究所，高功率微波技术重点实验室，四川绵阳 621900
2.
中国工程物理研究院研究生院，北京 100088

基金项目: 国家高技术研究计划项目；装备预研重点实验室基金项目

详细信息

作者简介:
王淦平（1983—），男，博士研究生，副研究员，主要从事脉冲功率技术研究；wanggpcaep@163.com

中图分类号: TN62
计量
- 文章访问数: 1607
- HTML全文浏览量: 738
- PDF下载量: 131
- 被引次数: 0
出版历程
- 收稿日期: 2019-08-14
- 修回日期: 2019-10-29
- 刊出日期: 2019-12-26

Study of ultrafast semiconductor opening switch

Wang Ganping^{1, 2
,},
Li Fei¹,
Jin Xiao¹,
Song Falun¹,
Zhang Qi^{1, 2}

1.
Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, CAEP, P. O. Box 919-1015, Mianyang 621900, China
2.
Graduate School, China Academy of Engineering Physics, Beijing 100088, China

摘要

摘要: 介绍了快速关断半导体开关（DSRD）的工作原理，研究了开关内部的物理过程，分析了系统参数对开关输出特性的影响，研究发现：基区材料的击穿阈值越高、载流子饱和漂移速度越大输出电压上升速率越快；基区高的电场击穿阈值或低的掺杂浓度会增加器件关断时间和最大工作电压；考虑各参数的影响，基于高击穿阈值的DSRD是实现快脉冲输出的理想器件；缩短正向泵浦时间可有效抑制预脉冲，当正向泵浦时间小于200 ns时，输出脉冲波形基本不变；为了获得理想的脉冲前沿，反向电流应在达到峰值时完成对注入电荷的抽取。设计了单前级开关的DSRD泵浦电路，研制了基于DSRD的快脉冲产生系统，输出脉冲前沿约4 ns，电压约8 kV，电压上升速率约2 kV/ns，满足FID开关器件对触发电压的要求。
- 固态脉冲发生器 /
- 高功率半导体断路开关 /
- 快前沿脉冲 /
- 脉冲功率技术
Abstract: In this paper, the working principle of drift step recovery diode (DSRD) is introduced. The relation between the device parameters and switching characteristic is revealed by studying the physics processes inside DSRD. The analyses show that the rising rate of output pulse is proportional to the electric field breakdown threshold and saturated drift velocity of carrier. Large breakdown threshold and low doping level are benefitial to improve the maximum operation voltage, but the switching time will be increased also. In general, high breakdown threshold is necessary for DSRD with excellent performance. In addition, for the expanding of the diffusion zone over time, the pre-pulse can be reduced with short pumping time, which is obvious when forward current time is larger than 200 ns. To obtain an ideal pulse front, the injected charge should be exhausted as soon as the backward current just achieves maximum. By a simple pumping circuit, a fast pulse generator based on DSRD with the rise time of about 4 ns and the amplitude of 8 kV was designed, which can be used to trigger the fast ionization diode.
- solid state pulse generator /
- high power semiconductor opening switch /
- fast rise-time /
- pulse power technology

HTML全文

图 1 DSRD内部载流子变化

Figure 1. Sketches of electric field and plasma concentration profiles during the opening process

下载: 全尺寸图片幻灯片

图 2 不同正向泵浦时间下的输出脉冲波形

Figure 2. Output voltage under different forward current pumping time

下载: 全尺寸图片幻灯片

图 3 反向电流峰值对输出脉冲的影响

Figure 3. Output voltage under different backward current amplitude

下载: 全尺寸图片幻灯片

图 4 反向电流上升时间对输出脉冲的影响

Figure 4. Output voltage under different backward current rise time

下载: 全尺寸图片幻灯片

图 5 基于DSRD的脉冲发生器电路结构

Figure 5. Circuit structure of DSRD-based pulse generator

下载: 全尺寸图片幻灯片

图 6 仿真结果

Figure 6. Simulation results

下载: 全尺寸图片幻灯片

图 7 负载输出电压波形

Figure 7. Output voltage waveform

下载: 全尺寸图片幻灯片

参考文献(13)

[1]	梁琳, 余岳辉. 半导体脉冲功率开关发展综述[J]. 电子电力技术, 2012, 46(12):42-45. (Liang Lin, Yu Yuehui. Review on development of semiconductor pulse power switches[J]. Power Electronics, 2012, 46(12): 42-45
[2]	Grekhov I V, KardoSysoev A F. Sub-nanosecond current drops in delayed breakdown of silicon p-n junction[J]. Sov Tech Phys Lett, 1979, 5(8): 395-396.
[3]	Grekhov I V, KardoSysoev A F, Kostina L S, et al. High-power subnanosecond switches[J]. Electronics Letters, 1981, 17(12): 422-423. doi: 10.1049/el:19810293
[4]	Focia R J, Schamiloglu E, Fleddermann C B. Simple techniques for the generation of high peak power pulses with nanosecond and subnanosecond rise times[J]. Rev Sci Instrum, 1996, 67(7): 2626-2629. doi: 10.1063/1.1147191
[5]	Grekhov I V. Pulse power generation in nano-and subnanosecond range by means of ionizing fronts in semiconductors: the state of the art and future prospects[J]. IEEE Trans Plasma Science, 2010, 38(5): 1118-1123. doi: 10.1109/TPS.2010.2043857
[6]	Grekhov I V, Mesyats G A. Physical basis for high-power semiconductor nanosecond opening switches[J]. IEEE Trans Plasma Science, 2000, 28(5): 1540-1544. doi: 10.1109/27.901229
[7]	Lyublinsky A G, Korotkov S V, Aristov Y V, et al. Pulse power nanosecond-range DSRD-based generators for electric discharge technologies[J]. IEEE Trans Plasma Science, 2013, 41(10): 2625-2629. doi: 10.1109/TPS.2013.2264328
[8]	Nikoo M S, Hashemi S M, Dilmaghanian M O. DSRD-based high-power repetitive short-pulse generator containing GDT: Theory and experiment[J]. IEEE Trans Plasma Science, 2017, 45(8): 2341-2350. doi: 10.1109/TPS.2017.2717047
[9]	Ivanov P, Kon'kovb O, Samsonovac T. Electrical performance of 4H-SiC based drift step recovery diodes[J]. Materials Science Forum, 2016, 858: 761-764. doi: 10.4028/www.scientific.net/MSF.858.761
[10]	王亚杰, 何鹏军, 荆晓鹏, 等. 基于漂移阶跃恢复二极管开关的脉冲源仿真计算[J]. 强激光与粒子束, 2018, 30:095005. (Wang Yajie, He Pengjun, Jing Xiaopeng, et al. Simulation and calculation of pulsed power source based on drift step recovery diode switching[J]. High Power Laser and Particle Beams, 2018, 30: 095005
[11]	方旭, 丁臻捷, 浩庆松, 等. 基于DSRD的高重频亚纳秒脉冲产生方法研究[C]//第四届全国脉冲功率会议. 2015. Fang Xu, Ding Zhenjie, Hao Qingsong, et al. Study on generation of drift step diodes for sub-nanosecond switching and high repetition rate operation//The 4^th China Pulse Power Conference. 2015
[12]	马红梅, 刘忠山, 杨勇, 等. 新型亚纳秒半导体切断开关研制[J]. 器件制造与应用, 2010, 35(4):337-339. (Ma Hongmei, Liu Zhongshan, Yang Yong, et al. Design and manufacture of novel sub-nanosecond opening semiconductor switch[J]. Manufacturing and Application of Device, 2010, 35(4): 337-339
[13]	梁勤金, 石小燕, 曹晓阳. 一种快速离化波开关及其在高压脉冲源中的应用[J]. 电讯技术, 2010, 50(5):68-71. (Liang Qinjin, Shi Xiaoyan, Cao Xiaoyang. A fast ionization wave switch and its application in high voltage pulser[J]. Telecommunication Engineering, 2010, 50(5): 68-71 doi: 10.3969/j.issn.1001-893x.2010.05.015