一种基于磁饱和变压器的DSRD脉冲电源设计

史晓蕾; 陈锦晖; 王冠文; 王磊; 曾涛; 杨威; 王旭; 苏文同; 吴官健

doi:10.11884/HPLPB202032.190387

一种基于磁饱和变压器的DSRD脉冲电源设计

doi: 10.11884/HPLPB202032.190387

史晓蕾^1,,
陈锦晖^{1, 2},
王冠文²,
王磊²,
曾涛¹,
杨威¹,
王旭¹,
苏文同¹,
吴官健¹

1.
中国科学院大学核科学与技术学院，北京 100049
2.
中国科学院高能物理研究所加速器中心，北京 100049

基金项目: 国家自然科学基金项目（11675194，11475200）

详细信息

作者简介:
史晓蕾（1993—），男，博士研究生，研究方向为加速器注入系统脉冲电源；shixl@ihep.ac.cn

中图分类号: TL501
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出版历程
- 收稿日期: 2019-09-28
- 修回日期: 2019-12-26
- 刊出日期: 2019-12-26

Design of drift step recovery diode pulse power generator based on magnetic saturation transformer

1.
School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
2.
Accelerator Division, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

摘要

摘要: 漂移阶跃恢复二极管（DSRD）具有开关速度快、重频高、工作电流大等优点，在脉冲功率技术中很有应用前景。研究了一种基于磁饱和变压器的DSRD泵浦电路拓扑结构，具有体积小、重量轻、可靠性高等特点。根据DSRD的工作要求，采用功率MOSFET作为初级开关，结合磁饱和变压器的升压和磁开关特性，设计了DSRD的泵浦电路。利用Pspice软件对电路进行了仿真分析，验证了电路原理的正确性。在仿真分析的基础上，完成了一台原理样机的设计和电路实验。实验结果表明，该电源样机在前级充电电压800 V条件下，50 Ω负载上产生的脉冲幅值大于7 kV，前沿小于4.2 ns（10%～90%），半高宽约10 ns。
- 漂移阶跃恢复二极管 /
- 磁饱和变压器 /
- 纳秒脉冲电源 /
- MOSFET
Abstract: Drift step recovery diode (DSRD) has a great application prospect in pulse power technology for its notably short switching-off time, high repetition rate and large working current. In this paper, a DSRD pump circuit topology based on magnetic saturation transformer is studied. The topology is small, light and reliable. According to the operating requirements of DSRD, a pump circuit was designed. It consists of a power MOSFET primary switch and a magnetic saturation transformer with boost and saturation characteristics. The circuit was simulated by Pspice software, which confirmed the principles of the circuit. Based on the simulation analysis, a prototype was designed and its circuit experiment was implemented. The experiment indicates that when the charging voltage is 800 V, the pulse amplitude on resistor load of 50 Ω is larger than 7 kV, the rise time is less than 4.2 ns (10%−90%) and the FWHM is about 10 ns.
- drift step recovery diode /
- magnetic saturation transformer /
- nanosecond pulse power generator /
- MOSFET

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图 1 脉冲电源电路原理图

Figure 1. Simplified scheme of the pulse generator

下载: 全尺寸图片幻灯片

图 2 DSRD脉冲电源电路仿真模型及仿真结果

Figure 2. Simulation model and result of the DSRD pulse generator

下载: 全尺寸图片幻灯片

图 3 脉冲电源实验电路

Figure 3. Prototype of the DSRD pulse generator

下载: 全尺寸图片幻灯片

图 4 输出脉冲波形

Figure 4. Test waveform of pulse

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图 5 电流互感器测得的DSRD泵浦电流

Figure 5. Test waveform of pumping current by current transformer

下载: 全尺寸图片幻灯片

表 1 DSRD主要特征参数

Table 1. The main parameters of DSRD

no.	paramaters	symbol	test conditions	bridge limit		unit
no.	paramaters	symbol	test conditions	minimum	maximum	unit
1	positive voltage	V_F	I_F＝10 mA	−	8	V
2	reverse current	I_R	V_R＝500 V	−	1	mA
3	breakdown voltage	V_(BR)	I_R＝5 mA	1 000	−	V
4	pulse voltage	V_p	i≥300 A	10	−	kV
5	pulse current	i	V_p≥10 kV	300	−	A
6	rise time	t_r	V_p＝10 kV	−	3	ns
7	repetitive frequency	f_R	V_p＝10 kV，t_r≤3 ns	10	−	kHz

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参考文献(14)

[1]	陈锦晖, 王磊, 施华, 等. HEPS在轴注入冲击器系统及快脉冲电源样机研制[J]. 强激光与粒子束, 2019, 31:040017. (Chen Jinhui, Wang Lei, Shi Hua, et al. Application of fast pulsed power supply to high energy photon source[J]. High Power Laser and Particle Beams, 2019, 31: 040017 doi: 10.11884/HPLPB201931.190007
[2]	刘锡三. 高功率脉冲技术[M]. 北京: 国防工业出版社, 2005. Liu Xisan. High pulsed power technology[M]. Beijing: National Defense Industry Press, 2005
[3]	Cook E G. Review of solid-state modulators[C]//Proc of XX International Linac Conference. 2000
[4]	吴佳霖, 刘英坤. 高功率半导体开关器件DSRD的研究进展[J]. 微纳电子技术, 2015, 52(4):311-215, 250. (Wu Jialin, Liu Yingkun. Research development of the high power semiconductor switching device DSRD[J]. Micronanoelectronic Technology, 2015, 52(4): 311-215, 250
[5]	梁勤金, 邓晓磊, 石小燕, 等. 新型半导体开关高压电磁脉冲产生技术[J]. 强激光与粒子束, 2012, 24(2):497-500. (Liang Qinjin, Deng Xiaolei, Shi Xiaoyan, et al. High voltage electromagnetic pulse generation using semiconductor switches[J]. High Power Laser and Particle Beams, 2012, 24(2): 497-500 doi: 10.3788/HPLPB20122402.0497
[6]	Krasnykh A. Overview of driver technologies for nanosecond TEM kickers[C]//Proceedings of the 7th International Particle Accelerator Conference. 2016, 3645-3647.
[7]	Benwell A, Burkhart C, Krasnykh A, et al. A 5kV, 3MHz solid-state modulator based on the DSRD switch for an ultra-fast beam kicker[C]//IEEE Power Modulator and High Voltage Conference. 2013: 328-331.
[8]	Lyublinsky A G, Korotkov S V, Aristov Y V, et al. Pulse power nanosecond-range DSRD-based generators for electric discharge technologies[J]. IEEE Trans Plasma Science, 2013, 41(10): 2625-2629. doi: 10.1109/TPS.2013.2264328
[9]	Grekhov I V, Mesyats G A. Physical basis for high-power semiconductor nanosecond opening switches[J]. IEEE Trans Plasma Science, 2000, 28(5): 1540-1544. doi: 10.1109/27.901229
[10]	Brylevsky V I, Efanov V M, Kardo-Sysyev A F, et al. Power nanosecond semiconductor opening plasma switches[J]//Proceedings of IEEE International Power Modulator Symposium. 1996: 51-54.
[11]	张玲, 周斌, 谢义方, 等. 基于漂移阶跃恢复二极管的超宽带探地雷达发射技术[J]. 强激光与粒子束, 2009, 21(12):1854-1858. (Zhang Ling, Zhou Bin, Xie Yifang, et al. Transmitter techniques for ultra-wideband ground penetrating radar based on drift step recovery diodes[J]. High Power Laser and Particle Beams, 2009, 21(12): 1854-1858
[12]	Min B D, Kim J H, Pavlov E, et al. A compact inductive type pulse generator using diodes as opening switch[C]//IEEE Pulsed Power Conference. 2005: 1364-1367.
[13]	Korotkov S V, Aristov Y V, Voronkov V B, et al. A small dynistor generator of high-power nanosecond pulses[J]. Instruments and Experimental Techniques, 2018, 61(1): 44-46. doi: 10.1134/S0020441217060057
[14]	Korotkov S V, Aristov Y V, Voronkov V B, et al. Semiconductor switches of laser pumping pulses of nanosecond duration[J]. Instruments & Experimental Techniques, 2009, 52(5): 699.