一台基于串级二极管技术的高强度脉冲硬X射线源

来定国; 邱孟通; 杨实; 苏兆锋; 徐启福; 丛培天; 任书庆

doi:10.11884/HPLPB202133.200269

一台基于串级二极管技术的高强度脉冲硬X射线源

doi: 10.11884/HPLPB202133.200269

强脉冲辐射环境模拟与效应国家重点实验室，西北核技术研究所，西安 710024

详细信息

作者简介:
来定国（1980—），男，副研究员，从事脉冲功率技术研究；317337224@qq.com

中图分类号: M386
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出版历程
- 收稿日期: 2020-09-22
- 修回日期: 2020-11-24
- 网络出版日期: 2021-03-30
- 刊出日期: 2021-03-05

An intense pulsed hard X-ray source based on series diode technology

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China

摘要

摘要: 介绍了利用串级二极管产生高强度脉冲硬X射线的方法及其辐射场参数。以“闪光二号”加速器为平台，通过适应性改造，产生快前沿电压脉冲；研制了两级阻抗1 Ω串级二极管，通过串联分压降低二极管端电压、各级二极管电子束独立打靶在空间叠加形成高强度均匀辐射场。解决了悬浮电极绝缘支撑、二极管阴极均匀发射等技术难题，实现了串级二极管的稳定工作。在总电压约700 kV、电流约310 kA条件下，X射线平均能量87 keV，500 cm²上的平均能注量36 mJ/cm²，剂量均匀性（最大值比最小值）达到2∶1。
- 串级二极管 /
- 强流电子束 /
- 脉冲硬X射线 /
- 闪光二号加速器 /
- 辐射模拟
Abstract: There are formidable difficulties to generate intense pulsed hard X-ray. The lack of high fidelity high fluence X-ray source has become a restriction factor of SGEMP effect research. The method for intense large-area pulsed hard X- ray production by using a series diode and the radiation parameters are presented in this paper. Flash II accelerator was refined to generate a fast rise time voltage pulse, and a two-stage series diode was developed for coupling electrical energy of high-voltage generator to a low endpoint voltage bremsstrahlung diode via two diodes in series. The X-rays generated by each diode added in space to improve intensity. A dynamic support system was invented to solve the insulation problem of the floating electrode and double-ring cathodes were designed to improve emission uniformity. The experimental results show that the two-stage series diode can work stably under ～700 kV voltage and ～310 kA current, the average energy of X rays is 87 keV, and the fluence is about 36 mJ/cm² over 500 cm² area with dose uniformity 2∶1 at 5 cm from the last converter.
- series diode /
- high-current electron beam /
- pulsed hard X-ray /
- Flash II accelerator /
- radiation simulation

HTML全文

图 1 X射线源系统组成

Figure 1. Structure of the X ray source

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图 2 脉冲功率源典型输出电压波形

Figure 2. Typical voltage waveform of the power source

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图 3 串级二极管结构

Figure 3. Structure of the series diode

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图 4 悬浮电极支撑系统工作过程

Figure 4. Operation process of floating cathode support system

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图 5 悬浮电极支撑针收缩过程

Figure 5. Retracting process of the support pins

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图 6 阴极结构和不同时刻的等离子体图像

Figure 6. Cathode structure and cathode plasma images at different time

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图 7 阴极环尺寸比例对辐射均匀性的影响

Figure 7. X ray uniformity at different radii ratio

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图 8 串级二极管束斑图像

Figure 8. Time-integrated pinhole camera image of the series diode

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图 9 串级二极管电压电流和的X射线脉冲波形

Figure 9. Series diode voltage, current and X ray waveform of typical experiment

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图 10 串级二极管和单间隙二极管X射线能谱

Figure 10. X ray spectrum of the series diode and single diode

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图 11 靶后5 cm处X射线剂量分布曲线和面分布

Figure 11. X-ray dose distribution over the area at 5 cm from last convertor

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表 1 连续5次实验二极管电压电流和X射线参数

Table 1. Experimental data of five consecutive shots

shot No.	voltage/ kV	current/ kA	X ray rise time/ns	FWHM/ ns	average dose/ rad（Si）	average fluence/ mJ·cm⁻²	X ray average energy/keV	uniformity
042	697	302	27.2	55.6	314	36.5	86.7	1.7:1
043	686	314	25.2	52.8	305	35.5	87.8	2.0:1
044	721	334	26.5	60.4	322	37.4	89.6	1.9:1
045	701	307	28.2	58.7	318	37.0	86.7	2.0:1
046	698	308	25.1	52.4	303	35.2	82.1	1.7:1
statistics	701±8	313±9	26.4±1.0	56.0±2.8	312±6.8	36.3±0.9	86.6±1.8

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参考文献(12)

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