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大功率780 nm半导体激光器的设计与制备

何林安 周坤 张亮 李弋 杜维川 胡耀 高松信 唐淳

何林安, 周坤, 张亮, 等. 大功率780 nm半导体激光器的设计与制备[J]. 强激光与粒子束, 2021, 33: 091001. doi: 10.11884/HPLPB202133.210099
引用本文: 何林安, 周坤, 张亮, 等. 大功率780 nm半导体激光器的设计与制备[J]. 强激光与粒子束, 2021, 33: 091001. doi: 10.11884/HPLPB202133.210099
He Lin’an, Zhou Kun, Zhang Liang, et al. Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm[J]. High Power Laser and Particle Beams, 2021, 33: 091001. doi: 10.11884/HPLPB202133.210099
Citation: He Lin’an, Zhou Kun, Zhang Liang, et al. Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm[J]. High Power Laser and Particle Beams, 2021, 33: 091001. doi: 10.11884/HPLPB202133.210099

大功率780 nm半导体激光器的设计与制备

doi: 10.11884/HPLPB202133.210099
基金项目: 科技部重点研发项目(2018YFB1107302)
详细信息
    作者简介:

    何林安(1992—),男,博士,助理研究员,主要从事高功率半导体激光器技术研究

  • 中图分类号: TN248.4

Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm

  • 摘要: 设计并制备了一款780 nm半导体激光器,并进行了外腔反馈锁模研究。利用金属有机化学气相沉积技术制备了激光器外延层,采用GaAsP/GaInP作为量子阱/波导层有源区,限制层采用低折射率AlGaInP材料。采用超高真空解理钝化技术,在激光器腔面蒸镀无定形ZnSe钝化层。未钝化器件在输出功率2.5 W时发生腔面灾变损伤(COD),钝化后器件未发生COD现象,电流在10 A时输出功率10.1 W,电光转换效率54%。体布拉格光栅(VBG)外腔锁定前后,器件的光谱半峰全宽分别为2.6 nm和0.06 nm,VBG变温调控波长范围约230 pm。
  • 图  1  780 nm半导体激光器的折射率及光场分布

    Figure  1.  Refractive index and mode distribution diagram of 780 nm semiconductor laser

    图  2  780 nm半导体激光器的功率效率曲线

    Figure  2.  Power and wall-plug efficiency curves of 780 nm semiconductor laser

    图  3  780 nm半导体激光器的远场与近场

    Figure  3.  Far field and near field of 780 nm semiconductor laser

    图  4  780 nm半导体激光器VBG锁模前后功率效率曲线和光谱分布

    Figure  4.  Power, conversion efficiency and spectrum curves of the 780 nm semiconductor laser before and after mode locked by VBG

    图  5  不同VBG加热电流下的780 nm半导体激光器光谱

    Figure  5.  Spectrum curves of the 780 nm semiconductor laser at different VBG heating current

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出版历程
  • 收稿日期:  2021-03-21
  • 修回日期:  2021-08-18
  • 网络出版日期:  2021-09-06
  • 刊出日期:  2021-09-24

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