等离子体介质阻挡放电氟化改性环氧树脂的时效性

康玉婵; 闫纪源; 彭程凯; 宋岩泽; 马国爽; 张亚辉; 吕天舒; 谢庆

doi:10.11884/HPLPB202133.210102

等离子体介质阻挡放电氟化改性环氧树脂的时效性

doi: 10.11884/HPLPB202133.210102

康玉婵^1,,
闫纪源^{1, 2},
彭程凯¹,
宋岩泽¹,
马国爽¹,
张亚辉¹,
吕天舒¹,
谢庆^{1, 2, ,}

1.
华北电力大学电力工程系，河北保定 071000
2.
华北电力大学新能源电力系统国家重点实验室，北京 102206

基金项目: 国家自然科学基金项目（51777076）；中央高校基本科研业务费专项资金项目（2019MS083）；新能源电力系统国家重点实验室自主研究课题（LAPS2019-21）

详细信息

作者简介:
康玉婵（1994—），女，硕士研究生，主要从事等离子体、高电压与绝缘技术相关研究

通讯作者:
谢　庆（1979—），男，博士，教授，主要从事电气设备在线监测与故障诊断、新型传感材料与绝缘材料研究

中图分类号: O53
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- 被引次数: 0
出版历程
- 收稿日期: 2021-03-22
- 修回日期: 2021-05-01
- 网络出版日期: 2021-05-28
- 刊出日期: 2021-06-15

Plasma dielectric barrier discharge fluorination modified epoxy resin and its ageing behavior

1.
Department of Electrical Engineering, North China Electric Power University, Baoding 071000, China
2.
State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China

摘要

摘要: 等离子体对材料的改性效果随放置时间会有所减弱，即表现出一定的时效性，限制了等离子体改性技术的进一步发展。为了探究等离子体介质阻挡放电（DBD）氟化改性环氧树脂的时效性，利用等离子体介质阻挡放电实现了环氧树脂表面氟化改性，并利用扫描电镜（SEM）、表面轮廓仪、X射线光电子能谱分析（XPS）、接触角测试仪、高阻计和闪络电压、表面电位测试系统对改性前和改性后放置在25 ℃老化箱中0～30 d的环氧树脂表面进行了物理形貌和化学组分的表征以及电气性能的测试。测试结果表明，DBD氟化改性实现了氟元素在环氧树脂表面接枝，这使得环氧树脂表面能降低，表面电阻率减小，陷阱能级变浅，从而加快了表面电位衰减速度，进而提升了沿面闪络电压。同时，等离子体DBD氟化改性环氧树脂表现出一定的时效性，放置30 d后，氟元素含量减少，表面能增大，表面电位衰减速度略有减慢，闪络电压也有所下降，但仍高于未处理的试样。
- 等离子体 /
- 氟化改性 /
- 环氧树脂 /
- 时效性 /
- 沿面闪络 /
- 表面电荷
Abstract: The modification effect of plasma on the material will be weakened with the storage time, that is, it shows a certain timeliness, which limits further development of plasma modification technology. To explore ageing behavior of plasma dielectric barrier discharge (DBD) fluorinated epoxy resin, the surface fluorination of epoxy resin was realized by plasma dielectric barrier discharge. Scanning electron microscopy (SEM), surface profilometer, X-ray photoelectron spectroscopy (XPS), contact angle tester, high resistance meter, flashover voltage and surface potential testing system were used to characterize the physical morphology, chemical composition and electrical properties of epoxy resin surface before modification as well as being placed in 25 ℃ aging box for 0−30 d after modification. The experimental results show that fluoride grafting on the surface of epoxy resin is realized by DBD fluorination modification, which reduces the surface energy, surface resistivity and trap level of epoxy resin, thus speeds up the surface potential decay rate and increases the flashover voltage along the surface. After storage of 30 d, the fluorine content decreased, the surface energy increased, the attenuation rate of surface potential slowed down slightly, and the flashover voltage also decreased, but it is still higher than that of the untreated sample.
- plasma /
- fluorination modification /
- epoxy resin /
- timeliness /
- surface flashover /
- surface charge

HTML全文

图 1 环氧树脂试样制备流程

Figure 1. Preparation process of epoxy resin sample

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图 2 等离子体DBD氟化改性平台

Figure 2. Plasma DBD fluorination modification platform

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图 3 李萨如图，P＝16.05 W

Figure 3. Lissajous figure, P＝16.05 W

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图 4 表面电位衰减特性测试系统

Figure 4. Surface potential attenuation characteristic test system

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图 5 沿面闪络电压测试系统

Figure 5. Surface flashover voltage test system

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图 6 处理前后环氧树脂表面轮廓

Figure 6. Surface profile of epoxy resin before and after treatment

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图 7 处理前后环氧树脂表面轮廓

Figure 7. Roughness test results

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图 8 SEM扫描结果

Figure 8. SEM images betore and after fluorination treatment

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图 9 XPS测试结果

Figure 9. XPS test results

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图 10 不同处理时间的试样C元素分峰图谱

Figure 10. Peak patterns of C element in samples not treated and treated for 5 min then stored for different time

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图 11 水接触角测量结果

Figure 11. Water contact angle test results

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图 12 表面自由能测试结果

Figure 12. Surface free energy test results

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图 13 表面电导率测试

Figure 13. Surface conductivity test

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图 14 试样表面电位衰减曲线

Figure 14. Initial potential on the sample surface

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图 15 表面电位衰减测试结果

Figure 15. Surface potential attenuation test results

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图 16 表面陷阱特性曲线

Figure 16. Surface trap characteristic curves

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图 17 闪络电压测试结果

Figure 17. Test results of flashover voltage

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表 1 试样表面Al，C，O，F原子分数

Table 1. Atom fraction of Al, C, O and F atoms on the surface of the sample

element	atom fraction/%
	0 d				7 d			30 d
	0 min	1 min	3 min	5 min	1 min	3 min	5 min	1 min	3 min	5 min
Al	0.25	0.22	0.26	0.5	0.21	0.24	0.58	0.28	0.21	0.66
C	66.43	51.34	47.33	48.99	51.49	48.46	50.31	53.44	49.53	54.45
O	33.26	17.21	11.99	11.85	17.57	13.77	18.79	17.58	16.7	22.14
F	0.06	31.23	40.41	38.66	30.73	37.53	30.32	28.69	33.56	22.76

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