硅光电倍增管自动增益校正系统设计

张琦; 王传伟; 李洪涛

doi:10.11884/HPLPB202234.210540

硅光电倍增管自动增益校正系统设计

doi: 10.11884/HPLPB202234.210540

张琦^1,,
王传伟^{1, 2},
李洪涛^2, ,

1.
中国工程物理研究院研究生院，北京 100088
2.
中国工程物理研究院流体物理研究所，脉冲功率科学与技术重点实验室，四川绵阳 621900

基金项目: 国家自然科学基金项目(11905208)

详细信息

作者简介:
张　琦，zhangqi19@gscaep.ac.cn

通讯作者:
李洪涛，lihongtao-ifp@caep.cn

中图分类号: TP272
计量
- 文章访问数: 945
- HTML全文浏览量: 336
- PDF下载量: 93
- 被引次数: 0
出版历程
- 收稿日期: 2021-12-01
- 修回日期: 2022-03-17
- 录用日期: 2022-03-21
- 网络出版日期: 2022-07-04
- 刊出日期: 2022-05-12

Design of automatic gain correction system for silicon photomultiplier tube

Zhang Qi^1
,,
Wang Chuanwei^{1, 2},
Li Hongtao^{2
, ,}

1.
Graduate School of China Academy of Engineering Physics, Beijing 100088, China
2.
Key laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, P. O. Box 919-108, Mianyang 621900, China

摘要

摘要: 温度会使硅光电倍增管的增益产生较大的漂移，进而影响硅光电倍增管的增益精度。为了使硅光电倍增管增益不随温度发生较大变化，设计了硅光电倍增管的自动增益校正系统，包括基于单片机的高压电源设计与采集系统设计。高电压模块精确工作的温度范围为−10～60 ℃，电源噪声约为30 mV，满足硅光电倍增管性能测试的需求。采集系统经过扫频测试与激光照射测试，可以较好地通过60 MHz的交流信号，并将光信号转变为较明显的电信号。该系统可以向京邦公司的硅光电倍增管阵列JARY-TP3050-8X8C提供工作电压与采集电路。
- SiPM /
- STM32 /
- 自动增益校正 /
- LM2576-ADJ /
- DS18B20
Abstract: The gain of silicon photomultiplier tube will drift greatly due to temperature variation, which will affect the gain accuracy of silicon photomultiplier tube. To realize that silicon photomultiplier tube gain does not change greatly with temperature variation, an automatic gain correction system for silicon photomultiplier tube is designed, including the design of a high voltage power supply and an acquisition system based on single chip microcomputer.The high voltage module can accurately operate in the temperature range of −10 ℃ to 60 ℃, and the power noise is about 30 mV, which can meet the requirements of silicon photomultiplier tube performance testing.Through frequency sweep test and laser irradiation test, the acquisition system can better pass the 60 MHz AC signal, and transform the optical signal into a more obvious electrical signal.The system provides a working voltage and acquisition circuit to Jingbon Compony’s silicon photomultiplier tube array JARY-TP3050-8X8C.
- SiPM /
- STM32 /
- automatic gain correction /
- LM2576-ADJ /
- DS18B20

HTML全文

图 1 SiPM增益与温度、过电压的关系

Figure 1. SiPM gain versus temperature and overvoltage

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图 2 高压电源结构图

Figure 2. High voltage power supply structure diagram

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图 3 LM2576-ADJ电路图

Figure 3. Circuit diagram of LM2576 - ADJ

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图 4 LM2576-ADJ输出电压噪声

Figure 4. Output voltage noise of LM2576-ADJ

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图 5 SiPM阵列采集电路原理

Figure 5. Circuit diagram of SiPM array

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图 6 60MHz输入频率下的输出电压信号图

Figure 6. Output voltage diagram at 60MHz input frequencies

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图 7 激光照射输出

Figure 7. Circuit output under laser irradiation

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表 1 测试结果表

Table 1. Results of experiments

designed temperature/℃	test temperature/℃	theoretical output voltage/V	actual output voltage/V
−20	−22.1	25.452	25.52
−10	−10	25.796	25.81
0	0.1	26.14	26.15
10	9.9	26.484	26.48
20	20.0	26.828	26.83
30	30.1	27.172	27.17
40	39.9	27.516	27.52
50	50.1	27.86	27.87
60	60.0	28.204	28.21
70	70.3	28.548	28.61

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