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纳秒脉冲下高气压SF6中同轴绝缘子沿面闪络影响因素实验研究

陈旭良 李俊娜 崔光曦 李楚男 李奇胜 葛建伟

陈旭良, 李俊娜, 崔光曦, 等. 纳秒脉冲下高气压SF6中同轴绝缘子沿面闪络影响因素实验研究[J]. 强激光与粒子束, 2023, 35: 035003. doi: 10.11884/HPLPB202335.220308
引用本文: 陈旭良, 李俊娜, 崔光曦, 等. 纳秒脉冲下高气压SF6中同轴绝缘子沿面闪络影响因素实验研究[J]. 强激光与粒子束, 2023, 35: 035003. doi: 10.11884/HPLPB202335.220308
Chen Xuliang, Li Junna, Cui Guangxi, et al. Experimental research on influencing factors of surface flashover of coaxial insulators in high-pressure SF6 under nanosecond pulse[J]. High Power Laser and Particle Beams, 2023, 35: 035003. doi: 10.11884/HPLPB202335.220308
Citation: Chen Xuliang, Li Junna, Cui Guangxi, et al. Experimental research on influencing factors of surface flashover of coaxial insulators in high-pressure SF6 under nanosecond pulse[J]. High Power Laser and Particle Beams, 2023, 35: 035003. doi: 10.11884/HPLPB202335.220308

纳秒脉冲下高气压SF6中同轴绝缘子沿面闪络影响因素实验研究

doi: 10.11884/HPLPB202335.220308
基金项目: 装备发展共用技术预研项目(80924010203)
详细信息
    作者简介:

    陈旭良,cxlcxl@stu.xjtu.edu.cn

    通讯作者:

    李俊娜,uvlina@126.com

  • 中图分类号: TM85

Experimental research on influencing factors of surface flashover of coaxial insulators in high-pressure SF6 under nanosecond pulse

  • 摘要: 研究纳秒脉冲下的绝缘子沿面闪络影响因素对电磁脉冲模拟装置绝缘结构设计具有重要的借鉴意义。通过搭建绝缘子沿面闪络实验平台,实验研究了在0.5 MPa的SF6气体中,脉冲电压波形、绝缘材料和绝缘子沿面场强分布对绝缘子沿面闪络电压的影响。结果表明:绝缘子的闪络电压具有随着脉冲前沿时间减小而增加的趋势;相较于脉冲电压全波,绝缘子在脉冲电压前沿波形耐受下闪络电压较高;聚酰亚胺材料的绝缘性能最好;通过降低绝缘子沿面最大场强,改善电场分布可以有效地提高绝缘子的闪络电压。
  • 图  1  盆形绝缘子材料试样图

    Figure  1.  Specimen of the basin insulator materials

    图  2  盆形绝缘子试样及电极结构剖面示意图

    Figure  2.  Schematic cross-section of the basin-shaped insulator sample and electrode structure

    图  3  实验平台示意图

    Figure  3.  Schematic diagram of the experimental platform

    图  4  绝缘子试品上三种前沿的全波脉冲电压波形图

    Figure  4.  Full-wave pulse voltage waveforms of the three leading edges on the insulator sample

    图  5  绝缘子开关配合结构示意图

    Figure  5.  Schematic diagram of the structure of the insulator switch used together

    图  6  绝缘子试品上三种前沿的电压波形图

    Figure  6.  Voltage waveforms of the three frontiers on the insulator sample

    图  7  典型闪络电压电流波形图

    Figure  7.  Typical flashover voltage and current waveform

    图  8  三种全波脉冲电压下盆形和盘形绝缘子试样的闪络电压

    Figure  8.  Flashover voltages of basin-shaped and disc-shaped insulator samples under three full-wave pulse voltages

    图  9  盆形和盘形绝缘子试样的电场分布云图

    Figure  9.  Cloud diagram of electric field distribution of basin-shaped and disc-shaped insulator samples

    图  10  绝缘子试样的沿面切向和法向电场分布图

    Figure  10.  Electric field distribution along the plane of the insulator sample in the tangential and normal directions

    图  11  盆形绝缘子电场改善前后闪络电压对比图

    Figure  11.  Comparison of flashover voltage before and after electric field improvement of basin-shaped insulators

    图  12  盆形绝缘子闪络电压与波形前沿时间关系图

    Figure  12.  Relationship between flashover voltage and waveform front time of basin-shaped insulators

    图  13  脉冲全波和脉冲前沿电压下盆形绝缘子耐受的闪络电压对比图

    Figure  13.  Comparison of flashover voltages of basin-shaped insulators under pulsed full-wave and pulsed frontier voltages

    表  1  不同材料的绝缘子闪络电压对比

    Table  1.   Comparison of flashover voltages of insulators with different materials

    insulator
    material
    flashover voltage/kVproportion/%flashover voltage/kVproportion/%flashover voltage/kVproportion/%
    tr=40 nstr=65 nstr=105 ns
    nylon 506.7 100.0 470.0 100.0 423.0 100.0
    PMMA 497.9 98.3 535.1 113.8 477.9 113.0
    PI 578.3 114.1 560.7 119.3 518.0 122.5
    下载: 导出CSV
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出版历程
  • 收稿日期:  2022-09-28
  • 修回日期:  2022-12-01
  • 网络出版日期:  2022-12-03
  • 刊出日期:  2023-03-01

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